Hydrogen blocking of In incorporation in MOVPE GaInN epitaxy - Ab initio picture of electron control - Publications (4)
Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth - ab initio studies
Computational Materials Science - 11 September 2023; 230:112489
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
Journal of Crystal Growth - 15 April 2017; 464: 123-126
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
Journal of Crystal Growth - 19 June 2014; 402: 330-336
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth - 1 March 2011; 318: 496-499