Hydrogen blocking of In incorporation in MOVPE GaInN epitaxy - Ab initio picture of electron control - Publications (4)


  1. Pawel Kempisty, Ashfaq Ahmad, Pawel Strak, Konrad Sakowski, Anna Kafar, Jacek Piechota, and Stanislaw Krukowski
    Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth - ab initio studies
    Computational Materials Science - 11 September 2023; 230:112489


  2. Robert Czernecki, Ewa Grzanka, Pawel Strak, Greg Targowski, Stanislaw Krukowski, Piotr Perlin, Tadeusz Suski, Michal Leszczynski
    Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
    Journal of Crystal Growth - 15 April 2017; 464: 123-126


  3. Robert Czernecki, Slawomir Kret, Pawel Kempisty, Ewa Grzanka, Jerzy Plesiewicz, Greg Targowski, Szymon Grzanka, Marta Bilska, Julita Smalc-Koziorowska, Stanislaw Krukowski, Tadek Suski, Piotr Perlin, Mike Leszczynski
    Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
    Journal of Crystal Growth - 19 June 2014; 402: 330-336

  4. Michal Leszczynski, Robert Czernecki, Stanislaw Krukowski, Marcin Krysko, Grzegorz Targowski, Pawel Prystawko, Jerzy Plesiewicz, Piotr Perlina, and Tadeusz Suski
    Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
    Journal of Crystal Growth - 1 March 2011; 318: 496-499