Wkład elektronowy do energii adsorpcji na powierzchniach półprzewodników - Publikacje (21)



    Praca przeglądowa

  • Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
    Charge control of semiconductor surfaces as elucidated by ab initio calculations - a review
    Progress in Surface Science - 3 February 2026;101:100809


    Prace standardowe

  • Pawel Kempisty, Ashfaq Ahmad, Pawel Strak, Konrad Sakowski, Anna Kafar, Jacek Piechota, and Stanislaw Krukowski
    Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth - ab initio studies
    Computational Materials Science - 11 September 2023; 230:112489


  • Pawel Strak, Ashfaq Ahmad, Pawel Kempisty, Jacek Piechota, Konrad Sakowski, Grzegorz Nowak, Yoshihiro Kangawa, Jan Łażewski, Stanislaw Krukowski
    Al coverage of AlN(0001) surface and Al vapor pressure - Thermodynamic assessment based on ab initio calculations
    Computational Materials Science - 15 February 2022; 203:111159


  • Pawel Strak, Konrad Sakowski, Jacek Piechota, Ashfaq Ahmad, Izabella Grzegory, Yoshihiro Kangawa, and Stanislaw Krukowski
    Adsorption of nitrogen at AlN(000-1) surface - decisive role of structural and electronic factors
    Surface Science - 11 June 2021;713:121791


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanislaw Krukowski
    Ab initio and thermodynamic picture of Al adsorption of AlN(0001) surface - role of bond creation and electron transition contributions
    Applied Surface Science - 03 August 2020; 532:147719-1-12


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, and Stanislaw Krukowski
    Chemical inactivity of GaN(0001) surface – the role of oxygen adsorption – ab intio picture
    Materials Science in Semiconductor Processing - 1 March 2019; 91: 252 - 259


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanislaw Krukowski
    Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at GaN(0001) surface
    Physical Chemistry Chemical Physics - 18 October 2017; 19: 29676-84


  • Jakub Soltys, Jacek Piechota and Stanislaw Krukowski
    Intrasurface Electron Transition Contribution to Energy of Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
    Journal of Crystal Growth - 1 June 2017; 468: 870-3


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Thermodynamics of GaN(s)-NH3(v)+N2(v)+H2(v) system - electronic aspects of the processes at GaN(0001) surface
    Surface Science, 31 March 2017; 662: 12 - 33


  • Pawel Strak, Pawel Kempisty, Konrad Sakowski and Stanislaw Krukowski
    Ab initio determination of electron affinity of polar nitride surfaces, clean and under Cs coverage
    Journal of Vacuum Science and Technology A - 3 February 2017; 35: 021406-1-17


  • Jakub Soltys, Jacek Piechota, Pawel Strak and Stanislaw Krukowski
    Electronic Charge Transfer Contribution in Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
    Applied Surface Science - 30 January 2017; 393: 168 - 79


  • Pawel Strak, Konrad Sakowski, Pawel Kempisty, Stanislaw Krukowski
    Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab intio approach
    Journal of Applied Physics - 3 September 2015; 118:095705

  • Maria Ptasinska, Jacek Piechota, Stanislaw Krukowski
    Adsorption of Hydrogen at GaN(0001) Surface – Ab Initio Study
    Journal of Physical Chemistry C - 7 May 2015; 119: 11563 - 9


  • Pawel Kempisty, Stanislaw Krukowski
    Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
    AIP Advances - 13 November 2014; 4: 117109-1-24


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
    Journal of Crystal Growth - 1 October 2014; 403: 105-9


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
    Journal of Crystal Growth - August 2014; 401:514-7


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: a new effect associated with the Fermi level position
    Journal of Crystal Growth - August 2014; 401:78-81


  • Stanislaw Krukowski, Pawel Kempisty, Pawel Strak and Konrad Sakowski
    Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
    Journal of Applied Physics - 31 January 2014; 115: 043529-1-9


  • Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
    Journal of Crystal Growth - 15 March 2014; 390: 71-9


  • Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
    Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
    Journal of Applied Physics - 9 August 2013; 114:063507-1-10


  • Pawel Kempisty and Stanislaw Krukowski
    Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface
    Journal of Crystal Growth - 13 August 2012; 358: 64-74