Termodynamiczne własnosci układów Al(l),Ga(l),In (l) - N2(g) - AlN(s), GaN(s),InN(s) - Publikacje (45)
Melting vs Decomposition of GaN: ab initio Molecular Dynamics Study and comparison to the experimental data
ACS Chemistry of Materials - 18 September 2023; 35:7694 - 7707
Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis. Relevance for Crystallization of GaN
Materials - 9 March 2021;14:1306
Ab intio study of Ga-GaN system: transition from adsorbed metal atoms to a metal-semiconductor junction
Journal of Vacuum Science and Technology A - 29 July 2015; 33:061101
Control of growth uniformity of III-V bulk crystals grown by contactless liquid phase electroepitaxy
Journal of Crystal Growth - 26 June 2012; 355: 1-7
Unlimited growth of III-V bulk crystals by liquid phase electroepitaxy
Crystal Growth and Design - 18 August 2011; 11: 4684-4689
The influence of indium on the growth of GaN from solution under high pressure
Journal of Crystal Growth 2010; 312(18): 2593-2598
Review: GaN growth by ammonia based methods - density functional theory study
Crystal Research and Technology. 1 October 2009; 44: 1038-1048
Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations
Journal-of-Crystal-Growth. 2008; 310: 900-905
High pressure - high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport
Journal-of-Crystal-Growth. 2007; 307: 259-267
Platelets and needles: two habits of pressure-grown GaN crystals
Journal-of-Crystal-Growth. 2007; 305: 414-420
Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
Proceeding SPIE. 3 March 2006 6121; 612103
Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method
Physica-Status-Solidi-C. 2006; (6): 1487-1490
Crystallization of free standing bulk GaN by HVPE
Physica-Status-Solidi-C. 2006; (6): 1453-1456
CFD and reaction computational analysis of the growth of GaN by HVPE method
Journal-of-Crystal-Growth. 15 Oct. 2006; 296: 31-42
Crystallization of GaN by HVPE on pressure grown seeds
Physica-Status-Solidi-A. May 2006; 203: 1654-1657
Mass flow and reaction analysis of the growth of GaN by HVPE
Physica-Status-Solidi-A. Jan. 2006; 203(1): 131-134
Growth of AlN, GaN and InN from the solution
International-Journal-of-Materials-and-Product-Technology. 2005; 22: 226-261
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method
Journal-of-Crystal-Growth. 15 July 2005; 281: 11-16
Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
Journal-of-Crystal-Growth. 15 Jan. 2005; 274: 55-64
Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method
Physica-Status-Solidi-B. Oct. 2004; 241: 2685-2688
Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
Journal-of-Crystal-Growth. 1 Oct. 2004; 270: 409-419
Directional crystallization of GaN on high-pressure direct solution grown substrates by growth from solution and HVPE
Journal of Crystal Growth, vol. 246, 2002, pp.194-206
Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure
Journal of Crystal Growth, vol. 246, 2002, pp.177-86
High-pressure direct synthesis of aluminium nitride
Journal-of-Physics:-Condensed-Matter. 11 November 2002; 14:11237-11242
High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
Journal of Physics-Condensed Matter, vol.13, no.40, 8 Oct. 2001, pp.8881-9
GaN Single Crystals Grown by High Pressure Solution Method
Revues in High Pressure Science and Technology vol. 7 1998 pp.760-2
Thermodynamics and growth of GaN single crystals under pressure
High-Pressure Materials Research. Symposium. Mater. Res. Soc. 1998, pp.349-60
GaN crystals: growth and doping under pressure
Nitride Semiconductors Symposium. Mater. Res. Soc. 1998, pp.15-26
Recent results in high pressure growth of GaN single crystals
Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Electrochem. Soc. 1998, pp.189-200
Synthesis of oxygen-free aluminium nitride ceramics
Journal of Materials Science, vol.33, no.13, 1 July 1998, pp.3321-4
Combustion synthesis of aluminum nitride under high pressure of nitrogen and nitrogen-argon mixtures
Journal of Materials Synthesis & Processing, vol.5, no.6, Nov. 1997, pp.449-58
GaN crystals grown in the increased volume high pressure reactors
III-V Nitrides. Symposium. Mater. Res. Soc. 1997, pp.35-40
Thermodynamics and high-pressure growth of (Al,Ga,In)N single crystals
Diamond & Related Materials, vol.6, no.10, Aug. 1997, pp.1515-23
Nitrogen high pressure influence on GaN crystal growth conditions - a computational analysis
Proceedings of the Joint XV AIRAPT and XXXIII EHPRG International Conference ed. W. Trzeciakowski, Singapore, World Scientific 1996, pp. 264-6
Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996
Recent results in the crystal growth of GaN at high N2 pressure
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996
III-V nitrides-thermodynamics and crystal growth at high N2 pressure.
Journal of Physics & Chemistry of Solids, vol.56, no.3-4, March-April 1995, pp.639-647
Thermodynamical properties of AlN, GaN and InN
Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.73-76
III-V nitrides - conditions for crystal growth at high N2 pressure
Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.61-68
Combustion synthesis of AlN at high pressure of nitrogen and argon mixtures
American Institute of Physics Conference Proceedings, no.309, pt.2, 1994, pp.1255-1258
Stability of indium nitride at N2 pressure up to 20 kbar.
American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.565-8
Crystal growth of III-N compounds under high nitrogen pressure
Physica B, vol.185, no.1-4, April 1993, pp.99-102
GaP-GaN pseudobinary system. Crystal growth of GaN from the solution in the liquid GaP.
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.346-8