Termodynamiczne własnosci układów Al(l),Ga(l),In (l) - N2(g) - AlN(s), GaN(s),InN(s) - Publikacje (45)


  1. Jacek Piechota, Stanislaw Krukowski, Bohdan Sadovyi, Petro Sadovyi, Sylwester Porowski and Izabella Grzegory
    Melting vs Decomposition of GaN: ab initio Molecular Dynamics Study and comparison to the experimental data
    ACS Chemistry of Materials - 18 September 2023; 35:7694 - 7707

  2. Jacek Piechota, Stanislaw Krukowski, Petro Sadovyi, Bohdan Sadovyi, Sylwester Porowski, and Izabella Grzegory
    Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis. Relevance for Crystallization of GaN
    Materials - 9 March 2021;14:1306

  3. Przemyslaw Witczak, Pawel Kempisty, Pawel Strak and Stanislaw Krukowski
    Ab intio study of Ga-GaN system: transition from adsorbed metal atoms to a metal-semiconductor junction
    Journal of Vacuum Science and Technology A - 29 July 2015; 33:061101

  4. Pawel Strak, Zbigniew R. Zytkiewicz and Stanislaw Krukowski
    Control of growth uniformity of III-V bulk crystals grown by contactless liquid phase electroepitaxy
    Journal of Crystal Growth - 26 June 2012; 355: 1-7

  5. Zbigniew R. Zytkiewicz, Pawel Strak, and Stanislaw Krukowski
    Unlimited growth of III-V bulk crystals by liquid phase electroepitaxy
    Crystal Growth and Design - 18 August 2011; 11: 4684-4689

  6. Izabella Grzegory, Michal Bockowski, Pawel Strak, Stanislaw Krukowski, Sylwester Porowski
    The influence of indium on the growth of GaN from solution under high pressure
    Journal of Crystal Growth 2010; 312(18): 2593-2598

  7. Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
    Review: GaN growth by ammonia based methods - density functional theory study
    Crystal Research and Technology. 1 October 2009; 44: 1038-1048

  8. Pawel Kempisty and Stanislaw Krukowski
    Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations
    Journal-of-Crystal-Growth. 2008; 310: 900-905

  9. Bockowski Michal, Strak Pawel, Kempisty Pawel, Grzegory Izabella, Krukowski Stanislaw, Lucznik Boleslaw and Porowski Sylwester
    High pressure - high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport
    Journal-of-Crystal-Growth. 2007; 307: 259-267

  10. Bockowski Michal, Grzegory Izabella, Kamler Grzegorz, Lucznik Boleslaw, Krukowski Stanislaw, Wroblewski Miroslaw, Kwiatkowski Pawlel, Jasik Krzysztof, Porowski Sylwester
    Platelets and needles: two habits of pressure-grown GaN crystals
    Journal-of-Crystal-Growth. 2007; 305: 414-420

  11. M. Bockowski, G. Nowak, G. Kamler, B. Lucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski, and I. Grzegory
    Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
    Proceeding SPIE. 3 March 2006 6121; 612103

  12. Bockowski-M; Grzegory-I; Nowak-G; Lucznik-B; Pastuszka-B; Kamler-G; Wroblewski-M; Kwiatkowski-P; Jasik-K; Wawer-W; Krukowski-S; Porowski-S
    Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method
    Physica-Status-Solidi-C. 2006; (6): 1487-1490

  13. Lucznik-B; Pastuszka-B; Grzegory-I; Bockowski-M; Kamler-G; Domagala-J; Nowak-G; Prystawko-P; Krukowski-S; Porowski-S
    Crystallization of free standing bulk GaN by HVPE
    Physica-Status-Solidi-C. 2006; (6): 1453-1456

  14. Krukowski S; Kempisty P; Lucznik B; Pastuszka B; Grzegory I; Bockowski M; Porowski S
    CFD and reaction computational analysis of the growth of GaN by HVPE method
    Journal-of-Crystal-Growth. 15 Oct. 2006; 296: 31-42

  15. Grzegory-I; Lucznik-B; Bockowski-M; Pastuszka-B; Kamler-G; Nowak-G; Krysko-M; Krukowski-S; Porowski-S
    Crystallization of GaN by HVPE on pressure grown seeds
    Physica-Status-Solidi-A. May 2006; 203: 1654-1657

  16. Kempisty-P; Grzegory-I; Bockowski-M; Krukowski-S; Lucznik-B; Pastuszka-B; Porowski-S
    Mass flow and reaction analysis of the growth of GaN by HVPE
    Physica-Status-Solidi-A. Jan. 2006; 203(1): 131-134

  17. Krukowski-S; Grzegory-L; Bockowski-M; Lucznik-B; Suski-T; Nowak-G; Borysiuk-J; Wroblewski-M; Leszczynski-M; Perlin-P; Porowski-S; Weyher-JL
    Growth of AlN, GaN and InN from the solution
    International-Journal-of-Materials-and-Product-Technology. 2005; 22: 226-261

  18. Bockowski-M; Grzegory-I; Borysiuk-J; Kamler-G; Lucznik-B; Wroblewski-M; Kwiatkowski-P; Jasik-K; Krukowski-S; Porowski-S
    Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method
    Journal-of-Crystal-Growth. 15 July 2005; 281: 11-16

  19. Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
    Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
    Journal-of-Crystal-Growth. 15 Jan. 2005; 274: 55-64

  20. Bockowski M, Grzegory I, Lucznik B, Krukowski S, Wroblewski M, Kwiatowski P, Jasik K, Wawer W, Borysiuk J, Kamler G, Porowski S
    Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method
    Physica-Status-Solidi-B. Oct. 2004; 241: 2685-2688

  21. Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
    Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
    Journal-of-Crystal-Growth. 1 Oct. 2004; 270: 409-419

  22. Bockowski M, Grzegory I, Krukowski S, Lucznik B., Wroblewski M, Romanowski Z, Borysiuk J, Weyher J, Hageman P, Porowski S
    Directional crystallization of GaN on high-pressure direct solution grown substrates by growth from solution and HVPE
    Journal of Crystal Growth, vol. 246, 2002, pp.194-206

  23. Grzegory I, Bockowski M, Lucznik B, Krukowski S, Romanowski Z, Wroblewski M, Porowski
    Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure
    Journal of Crystal Growth, vol. 246, 2002, pp.177-86

  24. Bockowski M, Lucznik B, Grzegory I, Wroblewski M, Krukowski S, Porowski S
    High-pressure direct synthesis of aluminium nitride
    Journal-of-Physics:-Condensed-Matter. 11 November 2002; 14:11237-11242

  25. Krukowski S, Bockowski M, Lucznik B, Grzegory I, Porowski S, Suski T, Romanowski Z
    High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
    Journal of Physics-Condensed Matter, vol.13, no.40, 8 Oct. 2001, pp.8881-9

  26. Lucznik B, Bockowski M, Wroblewski M, Grzegory I, Krukowski S, Nowak G, Leszczynski M, Teisseyre G, Pakula K, Baranowski JM, Suski T, Porowski S
    GaN Single Crystals Grown by High Pressure Solution Method
    Revues in High Pressure Science and Technology vol. 7 1998 pp.760-2

  27. Porowski S, Grzegory I, Krukowski S
    Thermodynamics and growth of GaN single crystals under pressure
    High-Pressure Materials Research. Symposium. Mater. Res. Soc. 1998, pp.349-60

  28. Grzegory I, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Weyher J, Nowak G, Suski T, Leszczynski M, Teisseyre H, Suski T, Litwin-Staszewska E, Porowski S
    GaN crystals: growth and doping under pressure
    Nitride Semiconductors Symposium. Mater. Res. Soc. 1998, pp.15-26

  29. Krukowski S, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Leszczynski M, Teisseyre G, Suski T, Porowski S
    Recent results in high pressure growth of GaN single crystals
    Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Electrochem. Soc. 1998, pp.189-200

  30. Witek A, Bockowski M, Presz A, Wroblewski M, Krukowski S, Wlosinski W, Jablonski K
    Synthesis of oxygen-free aluminium nitride ceramics
    Journal of Materials Science, vol.33, no.13, 1 July 1998, pp.3321-4

  31. Bockowski M, Witek A, Krukowski S, Wroblewski M, Porowski S, Marin-Ayral RM, Tedenac JC
    Combustion synthesis of aluminum nitride under high pressure of nitrogen and nitrogen-argon mixtures
    Journal of Materials Synthesis & Processing, vol.5, no.6, Nov. 1997, pp.449-58

  32. Porowski S, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Grzegory I, Leszczynski M, Nowak G, Pakula K, Baranowski JM
    GaN crystals grown in the increased volume high pressure reactors
    III-V Nitrides. Symposium. Mater. Res. Soc. 1997, pp.35-40

  33. Krukowski S.
    Thermodynamics and high-pressure growth of (Al,Ga,In)N single crystals
    Diamond & Related Materials, vol.6, no.10, Aug. 1997, pp.1515-23

  34. Krukowski S, Grzegory I, Bockowski M, Jun J, Łucznik B, Witek A Wróblewski M, Baranowski JM, Porowski S, Adamczyk J
    Nitrogen high pressure influence on GaN crystal growth conditions - a computational analysis
    Proceedings of the Joint XV AIRAPT and XXXIII EHPRG International Conference ed. W. Trzeciakowski, Singapore, World Scientific 1996, pp. 264-6

  35. Krukowski S
    Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
    MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996

  36. Grzegory I, Bockowski M, Lucznik B, Krukowski S, Wroblewski M, Porowski S
    Recent results in the crystal growth of GaN at high N2 pressure
    MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996

  37. Grzegory I, Jun J, Bockowski M, Krukowski S, Wroblewski M, Lucznik B, Porowski S
    III-V nitrides-thermodynamics and crystal growth at high N2 pressure.
    Journal of Physics & Chemistry of Solids, vol.56, no.3-4, March-April 1995, pp.639-647

  38. Grzegory I, Jun J, Boækowski M, Krukowski St, Porowski S
    Thermodynamical properties of AlN, GaN and InN
    Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.73-76

  39. Porowski S, Jun J, Boækowski M, Leszczynski M, Krukowski St, Wróblewski M Łucznik B, Grzegory I
    III-V nitrides - conditions for crystal growth at high N2 pressure
    Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.61-68

  40. Bockowski M, Grzegory I, Wroblewski M, Witek A, Jun J, Krukowski S, Porowski S, Ayral-Marin RM, Tedenac JC
    Combustion synthesis of AlN at high pressure of nitrogen and argon mixtures
    American Institute of Physics Conference Proceedings, no.309, pt.2, 1994, pp.1255-1258

  41. Grzegory I, Krukowski S, Jun J, Bockowski M, Wroblewski M, Porowski S
    Stability of indium nitride at N2 pressure up to 20 kbar.
    American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.565-8

  42. Grzegory I, Jun J, Krukowski St, Bockowski M, Porowski S
    Crystal growth of III-N compounds under high nitrogen pressure
    Physica B, vol.185, no.1-4, April 1993, pp.99-102

  43. Grzegory I, Jun J, Krukowski S, Porowski S.
    GaP-GaN pseudobinary system. Crystal growth of GaN from the solution in the liquid GaP.
    Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.346-8