Modelowanie ab initio grafenu i powierzchni SiC - Publikacje (10)
DFT modelling of the edge dislocation in 4H-SiC
Journal of Materials Science - 26 April 2019; 54: 10737 - 10745
Intrasurface Electron Transition Contribution to Energy of Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
Journal of Crystal Growth - 1 June 2017; 468: 870-873
Electronic Charge Transfer Contribution in Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
Applied Surface Science - 30 January 2017; 393: 168 - 179
Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface
Journal of Applied Physics - 25 August 2014; 116: 083502
Influence of a parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Journal of Crystal Growth - August 2014; 401:869-873
Structural defects in epitaxial graphene layers synthesized on
C-terminated 4H-SiC (000_1) surface - transmission electron microscopy and density functional theory studies
Journal of Applied Physics - 6 February 2014; 115: 054310
Experimental and theoretical investigation of graphene layers on SiC(000_1) in different stacking arrangements
Journal of Vacuum Science and Technology B - 15 May 2012; 30: 03D117
Experimental and theoretical investigation of graphene layers on SiC(000_1) in different stacking arrangements
Journal of Vacuum Science and Technology B - 15 May 2012; 30: 03D117
A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(0001) clean surfaces: significance of the surface Stark effect
New Journal of Physics. 13 April 2010; 12: 043024