Własnosci optyczne azotkowych studni kwantowych - Publikacje (10)
Optical properties of polar and nonpolar GaN/AlN multiquantum well systems - DFT study
Journal of Applied Physics - 16 October 2022; 132: 164306
Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing large substrate misorientation angle
Optical Materials Express - 1 January 2022; 12:119
Estimating efficiency of AlGaN light-emitting diodes with numerical simulations
Journal of Japanese Association for Crystal Growth - 28 October 2020; 47: 05
Wurtzite quantum well structures under high pressure
Journal of Applied Physics - 03 August 2020; 128:050901
High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures
Japanese Journal of Applied Physics - 7 November 2019; 59: SA0802
Experimental and theoretical analysis of influence of barrier composition on optical properties GaN/AlGaN multi-quantum wells: temperature- and pressure-dependent photoluminescence studies
Journal of Alloys and Compounds - 7 August 2018; 769: 1064 - 1071
Experimental and first-principles
studies of high-pressure effects on the structural, electronic and optical properties
of semiconductors and lanthanide doped solids
Japanese Journal of Applied Physics - 9 March 2017; 56: 05FA02
Influence of pressure on the properties of GaN/AlN multi-quantum wells - ab initio study
Journal of Physics and Chemistry of Solids - 19 February 2016; 93:100-117
Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab
initio and experimental study
Journal of Applied Physics - 7 January 2016; 119:015703
Doping effects in InN/GaN short-period quantum well structures - theoretical studies based on density functional methods
Journal of Crystal Growth - August 2014; 401:652-656