Wkład elektronowy do energii adsorpcji na powierzchniach półprzewodników - Publikacje (19)
Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth - ab initio studies
Computational Materials Science - 11 September 2023; 230:112489
Al coverage of AlN(0001) surface and Al vapor pressure - Thermodynamic assessment based on ab initio calculations
Computational Materials Science - 15 February 2022; 203:111159
Adsorption of nitrogen at AlN(000-1) surface - decisive role of structural and electronic factors
Surface Science - 11 June 2021;713:121791
Ab initio and thermodynamic picture of Al adsorption of AlN(0001) surface - role of bond creation and electron transition contributions
Applied Surface Science - 03 August 2020; 532:147719-1-12
Chemical inactivity of GaN(0001) surface – the role of oxygen adsorption – ab intio picture
Materials Science in Semiconductor Processing - 1 March 2019; 91: 252 - 259
Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at GaN(0001) surface
Physical Chemistry Chemical Physics - 18 October 2017; 19: 29676-84
Intrasurface Electron Transition Contribution to Energy of Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
Journal of Crystal Growth - 1 June 2017; 468: 870-3
Thermodynamics of GaN(s)-NH3(v)+N2(v)+H2(v) system - electronic aspects of the processes at GaN(0001) surface
Surface Science, 31 March 2017; 662: 12 - 33
Ab initio determination of electron affinity of polar nitride surfaces, clean and under Cs coverage
Journal of Vacuum Science and Technology A - 3 February 2017; 35: 021406-1-17
Electronic Charge Transfer Contribution in Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
Applied Surface Science - 30 January 2017; 393: 168 - 79
Adsorption of Hydrogen at GaN(0001) Surface – Ab Initio Study
Journal of Physical Chemistry C - 7 May 2015; 119: 11563 - 9
Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
AIP Advances - 13 November 2014; 4: 117109-1-24
DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
Journal of Crystal Growth - 1 October 2014; 403: 105-9
Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
Journal of Crystal Growth - August 2014; 401:514-7
Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: a new effect associated with the Fermi level position
Journal of Crystal Growth - August 2014; 401:78-81
Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
Journal of Applied Physics - 31 January 2014; 115: 043529-1-9
General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
Journal of Crystal Growth - 15 March 2014; 390: 71-9
Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
Journal of Applied Physics - 9 August 2013; 114:063507-1-10
Ab initio investigation of adsorption of atomic and molecular
hydrogen at GaN(0001) surface
Journal of Crystal Growth - 13 August 2012; 358: 64-74