Electric current flow in nitride optoelectronic devices - drift-diffusion modelling - Publications (8)
Effects of Mg dopant in Al-composition-graded AlxGa1-xN (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction
Applied Physics Express - 27 August 2021; 14:096503
Estimating efficiency of AlGaN light-emitting diodes with numerical simulations
Journal of Japanese Association for Crystal Growth - 28 October 2020; 47: 05
On the Composite Discontinuous Galerkin Method for Simulations of Electric Properties of Semiconductor Devices
Electronic Transactions on Numerical Analysis - 18 March 2019; 51: 75-98
Electric field dynamics in nitride structures containing quaternary alloy
(Al, In, Ga)N
Journal of Applied Physics - 6 July 2016; 120: 015702-1-10
Discretization of the drift-diffusion equations with the composite discontinuous Galerkin method
Lecture Notes in Computer Science - 1 January 2016; 9574: 391-400
Simulation of trap-assisted tunneling effect on characteristics of
gallium nitride diodes
Journal of Applied Physics - 27 June 2012; 111: 123115
Ni-Au contacts to p-type GaN - structure and properties
Solid State Electronics. 1 July 2010; 54: 701-9
Theoretical study of current overflow in GaN based light emitters with superlattice cladding layers
Journal-of-Applied-Physics. 1 July 2006; 100: 16103