The list of my publications in reverse chronological order


  1. S. P. Łepkowski, “Quantum spin Hall effect in two-monolayer-thick InN/InGaN coupled multiple quantum wells”, Nanomaterials 13, 2212 (2023).

  2. S. P. Łepkowski, “Advances in topological materials: Fundamentals, challenges and outlook”, Nanomaterials 12, 3522 (2022).

  3. S. P. Łepkowski, A.R. Anwar, “Polarization-induced phase transitions in ultra-thin InGaN-based double quantum wells”, Nanomaterials 12, 2418 (2022).

  4. A.R. Anwar,M. T. Sajjad, M. A. Johar, C. A. Hernandez-Gutierrez, M. Usman, S. P. Łepkowski, “Recent progress in micro-LED based display technologies”, Laser Photonics Rev., 16, 2100427 (2022).

  5. S. P. Łepkowski, A.R. Anwar, “Biaxial relaxation coefficient in group-III nitride quantum wells and thin films”, Acta Physica Polonica A 141, 130 (2022).

  6. S. P. Łepkowski, A.R. Anwar, “Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations”, Journal Phys.: Condens. Matter, 33, 355402 (2021).

  7. S. P. Łepkowski, “First-principles calculation of higher-order elastic constants using exact deformation-gradient tensors”, Phys. Rev. B 102, 134116 (2020).

  8. S. P. Łepkowski, W. Bardyszewski, “Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells”, Scientific Reports 8, 15403 (2018).

  9. W. Bardyszewski, D. Rodak, S. P. Łepkowski, “Magnetoconductance in InN/GaN quantum wells in topological insulator phase”, EPL (Europhysics Lett.), 118, 27001 (2017).

  10. S. P. Łepkowski, W. Bardyszewski, “Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells”, Journal Phys.: Condens. Matter, 29, 195702 (2017).

  11. S. P. Łepkowski, W. Bardyszewski, “Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure”, Journal Phys.: Condens. Matter, 29, 055702 (2017).

  12. S. P. Łepkowski, „Inapplicability of Martin transformation to elastic constants of zinc-blende and wurtzite group-III nitride alloys”, J. Appl. Phys. 117, 105703 (2015).

  13. W. Bardyszewski, S. P. Łepkowski, „Nonlinear Zeeman splitting of magnetoexcitons in c-plane wurtzite GaN-based quantum wells”, Phys. Rev. B 90, 075302 (2014).

  14. S. P. Łepkowski, W. Bardyszewski, D. Rodak, „Polarization-induced band inversion in In-rich InGaN/GaN quantum wells”, Acta Physica Polonica A 126, 1154 (2014).

  15. S. P. Łepkowski, I. Gorczyca, K. Stefańska-Skrobas, N. E. Christensen, and A. Svane, “Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells”, Phys. Rev. B 88, 081202 (2013).

  16. S. P. Łepkowski and I. Gorczyca, „Elastic properties of InGaN and InAlN from first-principles calculations”, AIP Conf. Proc. 1566, 83 (2013).

  17. W. Bardyszewski, S. P. Łepkowski, „Optical anisotropy in [0001] oriented GaN/AlGaN quantum wells under pressure”, AIP Conf. Proc. 1566, 437 (2013).

  18. W. Bardyszewski, S. P. Łepkowski, „Pressure-dependent reordering of valence band states in GaN/AlxGa1-xN quantum wells”, Phys. Rev. B 85, 035318 (2012).

  19. T. Suski, S. P. Łepkowski, G. Staszczak, R. Czernecki, P. Perlin, and W. Bardyszewski, „Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field”, J. Appl. Phys. 112, 053509 (2012).

  20. T. Suski, G. Staszczak, S. P. Łepkowski, P. Perlin, R. Czernecki, I. Grzegory, M. Funato, and Y. Kawakami, „Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells”, Phys. Status Sol. (b) 249, 476 (2012).

  21. S. P. Łepkowski, W. Bardyszewski, „Pressure-driven reordering of valence band states in AlGaN/AlN quantum wells”, Acta Physica Polonica A, 122, 1029 (2012).

  22. S. P. Łepkowski, I. Gorczyca, „Ab initio study of elastic constants in InxAl1-xN and InxAl1-xN wurtzite alloys”, Phys. Rev. B 83, 203201 (2011).

  23. S. P. Łepkowski, I. Gorczyca, „Structural and elastic properties of wurtzite Al-rich InxAl1-xN alloys”, Acta Physica Polonica A 119, 666 (2011).

  24. W. Bardyszewski, S. P. Łepkowski, H. Teisseyre, „Pressure dependence of exciton binding energy in GaN/AlxGa1-x N quantum wells”, Acta Physica Polonica A 119, 663 (2011).

  25. S. P. Łepkowski and I. Gorczyca, „Poisson’s ratio and biaxial relaxation coefficient in InxGa1-xN and InxAl1-xN alloys”, Acta Physica Polonica A 120, 902 (2011).

  26. W. Bardyszewski, S. P. Łepkowski, „Symmetry of the top valence band states in GaN/AlGaN quantum wells and its influence on the polarization of emitted light”, Acta Physica Polonica A 120, 894 (2011).

  27. S. P. Łepkowski, W. Bardyszewski, H. Teisseyre, „Effect of the built-in strain on the in-plane optical anisotropy of m-plane GaN/AlGaN quantum wells”, Acta Physica Polonica A 120, 897 (2011).

  28. I. Gorczyca, A. Kamińska, G. Staszczak, R. Czernecki, S. P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butte, J.F. Carlin, E. Feltin, N. Grandjean, N. E. Christensen, and A. Svane, „Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors”, Phys. Rev. B 81, 235206 (2010).

  29. S. P. Łepkowski, “Influence of nonlinear elasticity on the stress field induced by nitride quantum dots in a subsurface layer”, AIP Conf. Proc. 1199, 116 (2010).

  30. S. P. Łepkowski, “Influence of second-order piezoelectricity on the pressure coefficient of the light emission in (111)-oriented InGaAs/GaAs quantum wells”, AIP Conf. Proc. 1199, 229 (2010).

  31. I. Gorczyca, S.P. Łepkowski, T. Suski, N.E. Christensen and A. Svane, “Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys”, Phys. Rev. B 80, 075202 (2009).

  32. S. P. Łepkowski, I Gorczyca, „Pressure dependence of the light emission in zinc-blende InGaAs/GaAs and InGaN/GaN quantum wells”, Acta Physica Polonica A, 116, 857 (2009).

  33. S. P. Łepkowski, “Significance of third-order elasticity for determination of the pressure coefficient of the light emission in strained quantum wells”, Phys. Rev. B 78, 153307 (2008).

  34. S. P. Łepkowski, “Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-oriented InGaAs/GaAs quantum wells”, Phys. Rev. B 77, 155327 (2008).

  35. G. Rządkowski, S. Łepkowski, “A Generalization of the Euler-Maclaurin Summation Formula: An Application to Numerical Computation of the Fermi-Dirac Integrals”, J. of Sci. Comput. 35, 63 (2008).

  36. S. P. Łepkowski, “Effects of nonlinear elasticity and electromechanical coupling on pressure coefficient of the light emission in group-III nitride quantum structures”, J. Phys.: Conf. Ser. 121, 012003 (2008).

  37. S. P. Łepkowski, “Nonlinear elasticity effect in group III-nitride quantum heterostructures: Ab initio calculations”, Phys. Rev. B 75, 195303 (2007).

  38. S. P. Łepkowski, “Effect of nonlinear elasticity on interband and intersubband transition energies in GaN/AlN superlattices”, Acta Physica Polonica A 112, 315 (2007).

  39. S. P. Łepkowski, J. A. Majewski, G. Jurczak, “Effects of Nonlinear Elasticity in Nitride Semiconductors and their Nanostructures”, AIP Conf. Proc. 893, 345 (2007).

  40. G. Rządkowski, S. Łepkowski, “A generalization of the Euler-Maclaurin summation formula: an application to numerical computation of the Fermi-Dirac integrals”, AIP Conf. Proc. 936, 488 (2007).

  41. S. P. Łepkowski, J.A. Majewski, “Effect of electromechanical coupling on the pressure coefficient of the light emission in group-III nitride quantum wells and superlattices”, Phys. Rev. B 74, 035336 (2006).

  42. H. Teisseyre, T. Suski, S. P. Łepkowski, P. Perlin, G. Jurczak, P. Dłużewski, B. Daudin, N. Grandjean, „Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies”, Appl. Phys. Lett. 89, 051902, (2006).

  43. T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Łepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czarnecki, A. Bering-Staniszewska, P. G. Eliseev, „Anomalous temperature characteristics of single wide quantum well InGaN laser diode”, Appl. Phys. Lett. 88, 71121, (2006).

  44. S. P. Łepkowski, S. Krukowski, „Theoretical study of current overflow in GaN based light emitters with superlattice cladding layers”, J. Appl. Phys. 100, 016103 (2006).

  45. S. P. Łepkowski, J.A. Majewski, “Effects of nonlinear elasticity and electromechanical coupling on optical properties of InGaN/GaN and AlGaN/AlN quantum wells”, Acta Physica Polonica A 110, 237 (2006).

  46. S. P. Łepkowski, G. Jurczak , „Quantum Confined Stark Effect in vertically correlated GaN/AlN quantum dots”, Phys. Stat. Sol. (c) 6, 2052, (2006).

  47. S. P. Łepkowski, J.A. Majewski, G. Jurczak, „Nonlinear elasticity in III-N compounds : Ab initio calculations”, Phys. Rev. B 72, 245201 (2005).

  48. S. P. Łepkowski, J.A. Majewski, G. Jurczak, „Nonlinear elasticity in wurtzite planar superlattices and quantum dots”, Acta Physica Polonica A, 108, 749, (2005).

  49. G. Jurczak, S. P. Łepkowski, P. Dłużewski, T. Suski, “Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots”, Phys. Stat. Sol. (c) 2, 972 (2005).

  50. S. P. Łepkowski, G. Jurczak, P. Dłużewski, T. Suski, “Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots”, in GaN, AlN, InN and Their Alloys, edited by Christian Wetzel, Bernard Gil, Masaaki Kuzuhara, Michael Manfra, Mater. Res. Soc. Symp. Proc. 831, 653, Warrendale, PA, (2005).

  51. S. P. Łepkowski, J. A. Majewski, “Pressure dependence of elastic constants in wurtzite and zinc-blende nitrides and their influence on the optical pressure coefficients in nitride heterostructures”, in GaN, AlN, InN and Their Alloys edited by Christian Wetzel, Bernard Gil, Masaaki Kuzuhara, Michael Manfra, Mater. Res. Soc. Symp. Proc. 831, 647, Warrendale, PA, (2005).

  52. S. P. Łepkowski, J. A. Majewski, „Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells”, Solid State Comm. 131, 763, (2004).

  53. S. P. Łepkowski, J. A. Majewski, „Pressure dependence of elastic constants in zinc-blende III-N and their influence on the light emission in nitride heterostructures”, Acta Physica Polonica A 105, 559, (2004).

  54. C. Skierbiszewski, I. Gorczyca, S. P. Łepkowski, J. Łusakowski, J. Borysiuk, J. Toivonen, “The electron effective mass at the bottom of the GaNAs conduction band”, Semicond. Sci. Technol., 19, 1189, (2004).

  55. S. Anceau, P. Lefebvre, T. Suski, S. P. Łepkowski, H. Teisseyre, L. H. Dmowski, , L. Kończewicz, A. Kamińska, A. Suchocki, H. Hirayama and Y. Aoyagi, “Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures”, Phys. Stat. Sol. (a) 201, 190 (2004).

  56. S. Anceau, S. P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama, Y. Aoyagi, “Small internal, electric fields in quaternary InAlGaN heterostructures”, NATO Science Series, Kluwer Academic Publishers, 144, 215, (2004).

  57. H. Teisseyre, T. Suski, S. P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Konczewicz, H. Hirayama, Y. Aoyagi, “Determination of built-in electric fields in quaternary InAlGaN heterostructures”, Appl. Phys. Lett. 82, 1541 (2003).

  58. T. Suski, H. Teisseyre, S. P. Łepkowski, P. Perlin, H. Mariette, T. Kitamura, Y. Ishida, H. Okumura, S. F. Chichibu, “Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies”, Phys. Stat. Sol. (b) 235, 225 (2003).

  59. C. Consejo, L. Konczewicz, S. Contreras, B. Jouault, S. Łepkowski, M. Zielinski, J. J. L. Robert, P. Lorenzini, Y. Cordier,” High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures”, Phys. Stat. Sol. (b) 235, 232 (2003).

  60. S. P. Łepkowski, T. Suski, H. Teisseyre, H. Mariette, T. Kitamura, Y. Ishida, H. Okumura, T. Onuma, T. Koida, S. F. Chichibu, “Anomalous pressure dependence of light emission in cubic InGaN”, Phys. Stat. Sol. (c) 7, 2682 (2003).

  61. P. Lefebvre, S. Anceau, P. Valvin, T. Taliercio, L. Konczewicz, T. Suski, S. P. Łepkowski, H. Teisseyre, H. Hirayama, Y. Aoyagi, “Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields”, Phys. Rev. B 66, 195330 (2002).

  62. T. Suski, H. Teisseyre, S. P. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, S. F. Chichibu, „Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells”, Appl. Phys. Lett. 81, 232 (2002).

  63. S. P. Łepkowski, T. Suski, P. Perlin, V. Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies, „Study of light emission from GaN/AlGaN quantum wells”, J. Appl. Phys. 91, 9622 (2002).

  64. H. Teisseyre, T. Suski, S. P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama, Y. Aoyagi, „Small Built-in Electric Fields in Quaternary InAlGaN Hetrostructures”, Phys. Status Sol. (b) 234, 764 (2002).

  65. T. Suski, H. Teisseyre, S. P. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, S. F. Chichibu, ”Pressure Coefficients of the Light Emission in Cubic InGaN epilayers and Cubic InGaN/GaN Quantum Wells”, Phys. Status Sol. (b) 234, 759 (2002).

  66. C. Skierbiszewski, S. P. Łepkowski, P. Perlin, T. Suski, W. Jantsch, J. Geisz, “Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells”, Physica E 13, 1078 (2002).

  67. T. Suski, P. Perlin, S. P. Łepkowski, H. Teisseyre, I. Gorczyca, P. Prystawko, M. Leszcynski, N. Grandjean, J. Massies, T. Kitamura, Y. Ishida, S. F. Chichibu, H. Okumura, “Piezoelectric field and its influence on the pressure behavior of the light emission from InGaN/GaN and GaN/AlGaN quantum wells”, in GaN and Related Alloys, edited by J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, H. Riechert, Mater. Res. Soc. 693, 487 Warrendale, PA, USA, (2002).

  68. P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Łepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Grandjean, J. Massies, “Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures.”, Phys. Rev. B 64, 115319 (2001).

  69. S. P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies, “Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells”, Appl. Phys. Lett. 79, 1483 (2001).

  70. P. Perlin, T. Suski, S. P. Łepkowski, H. Teisseyre, N. Grandjean, J. Massies, “Large built-in electric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells”, Phys. Status Sol. (a) 188, 839 (2001).

  71. I. Grzegory, M. Boćkowski, S. Krukowski, B. Łucznik, M. Wróblewski, J. L. Weyher, M. Leszczyński, P. Prystawko, R. Czarnecki, J. Lehnert, G. Nowak, P. Perlin, H. Teisseyre, W. Purgal, W. Krupczyński, T. Suski, L. H. Dmowski, E. Litwin-Staszewska, C. Skierbiszewski, S. Łepkowski, S. Porowski, “Blue laser on high N2 pressure-grown bulk GaN”, Acta Physica Polonica A 100, 229 (2001).

  72. P. Perlin, S. P. Łepkowski, H. Teisseyre, T. Suski, “The role of internal electric fields in III-N quantum structure”, Acta Phys. Polonica A 100, 261 (2001).

  73. P. Perlin, T. Suski, P. Wiśniewski, I. Gorczyca, S. Łepkowski, M. Hansen, S. P. denBaars, B. Damilano, N. Grandjean, J. Massie, „Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures”, in GaN and Related Alloys, edited by C. Wetzel, M. S. Shur, U. K. Mishra, B. Gil, K. Kishino, Mater. Res. Soc. 639, G9.8.1-6. Warrendale, PA, USA, (2001).

  74. S. P. Łepkowski, M. Bugajski, “Theoretical analysis of optical gain in quantum well lasers including valence-band mixing effect”, Acta Physica Polonica A 92, 903 (1997).

  75. M. Bugajski, M. Kaniewska, K. Regiński, A. Malag, S. Łepkowski, J. Muszalski, „GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics”, Proc. of the SPIE 3186, 310 (1997).

  76. S. P. Łepkowski, B. Mroziewicz, „Numerical analysis of carrier transport and optical gain in the broad-area semiconductor lasers with filamentary distributed optical field”, Electr. Technol. 30, 247 (1997).

  77. S. P. Łepkowski, „Periodic boundary conditions for the numerical analysis of semiconductor devices”, Electr. Technol. 29, 29 (1996).

  78. S. P. Łepkowski, M. Bugajski, „Carrier transport modelling in GRIN-SCH_MQW semiconductors lasers”, Electr. Technol. 29, 88 (1996).

  79. S. P. Łepkowski, B. Mroziewicz, „Finite element modelling of potential and carrier distribution in the broad-area lasers below the threshold”, Electr. Technol. 28, 29 (1995).

  80. B. M. A. Rahman, S. P. Łepkowski, K. T. V. Grattan, “Thermal modeling of vertical-cavity surface-emitting lasers using the finite-element method”, IEE Proc.-Optoectron. 142, 82 (1995).