Laboratory of Optoelectronic Devices
NL15 Publication list
300. Kafar, Anna; Stanczyk, Szymon; Sarzynski, Marcin; Grzanka, Szymon; Goss, Jakub; Makarowa, Irina; Nowakowska-Siwinska, Anna; Suski, Tadek; Perlin, Piotr; ,”InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emiter”,Photonics Research,5,2,A30-A34,2017,Optical Society of America
299. Najda, SP; Perlin, P; Suski, T; Marona, L; Stanczyk, S; Leszczyński, M; Wisniewski, P; Czernecki, R; Targowski, G; Carson, C; ,AlGaInN laser-diode technology for optical clocks and atom interferometry,SPIE OPTO,101041L-101041L-7,2017,International Society for Optics and Photonics
298. Śpiewak, P; Wasiak, M; Kuc, M; Stańczyk, Sz; Perlin, P; Nakwaski, W; Sarzała, RP; ,”Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser bars”, Semiconductor Science and Technology,32,2,025008,2017,IOP Publishing
297. Pierścińska, Dorota; Marona, Łucja; Pierściński, Kamil; Wiśniewski, Przemysław; Perlin, Piotr; Bugajski, Maciej; ,High-resolution mirror temperature mapping in GaN-based diode lasers by thermoreflectance spectroscopy,Japanese Journal of Applied Physics,56,2,020302,(2017)
296. Najda, Stephen P; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; ,AlGaInN laser diode bar and array technology for high-power and individual addressable applications,SPIE Photonics Europe,,98920Z-98920Z-7,2016,International Society for Optics and Photonics
295. Muziol, Grzegorz; Turski, Henryk; Siekacz, Marcin; Grzanka, Szymon; Perlin, Piotr; Skierbiszewski, Czesław; ,Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,Applied Physics Express,9,9,092103,2016,IOP Publishing
294. Czernecki, Robert; Grzanka, Ewa; Strak, Pawel; Targowski, Greg; Krukowski, Stanislaw; Perlin, Piotr; Suski, Tadeusz; Leszczynski, Mike; ,Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers,Journal of Crystal Growth,2016,North-Holland
293. Najda, SP; Perlin, P; Suski, T; Marona, L; Boćkowski, M; Leszczyński, M; Wisniewski, P; Czernecki, R; Kucharski, R; Targowski, G; ,Free-space and underwater GHz data transmission using AlGaInN laser diode technology,SPIE Defense+ Security,983309-983309-6,2016,International Society for Optics and Photonics
292. Najda, SP; Perlin, P; Suski, T; Marona, L; Boćkowski, M; Leszczynski, M; Wisniewski, P; Czernecki, R; Kucharski, R; Targowski, G; ,Advances in AlGaInN laser diode technology for defence and sensing applications,SPIE Defense+ Security,,,98340K-98340K-7,2016,International Society for Optics and Photonics
291. Kafar, A; Stanczyk, S; Sarzynski, M; Grzanka, S; Goss, J; Targowski, G; Nowakowska-Siwinska, A; Suski, T; Perlin, P; ,”Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate”, Optics Express,24,9,9673-9682,2016,Optical Society of America
290. Najda, SP; Perlin, P; Suski, T; Marona, L; Bóckowski, M; Leszczyński, M; Wisniewski, P; Czernecki, R; Kucharski, R; Targowski, G; ,AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications,SPIE LASE,,,97390U-97390U-7,2016,International Society for Optics and Photonics
289. Najda, SP; Perlin, P; Suski, T; Marona, L; Bockowski, M; Leszczyński, M; Wisniewski, P; Czernecki, R; Kucharski, R; Targowski, G; ,AlGaInN laser diode technology for systems applications,SPIE OPTO,,,974819-974819-9,2016,International Society for Optics and Photonics
288. Najda, Stephen P; Perlin, Piotr; Suski, Tadek; Marona, Lucja; LeszczyĹ, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Malcolm A; ,AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water,Optical Engineering,55,2,026112-026112,2016,International Society for Optics and Photonics
287. Piotr Perlin, Szymon Stańczyk, Steve Najda, Tadek Suski, Przemek Wiśniewski, Irina Makarowa, Łucja Marona, Anna Kafar, Agata Bojarska, Robert Czernecki, Robert Sarzała, Maciej Kuc and Mike Leszczynski. “Development of the Nitride Laser Diode Arrays for Video and Movie Projectors”. MRS Advances, available on CJO2016. doi:10.1557/adv.2016.132. (2016)
286. Marona, Lucja; Smalc-Koziorowska, Julita; Grzanka, Ewa; Sarzynski, Marcin; Suski, Tadek; Schiavon, Dario; Czernecki, Robert; Perlin, Piotr; Kucharski, Robert; Domagala, Jaroslaw; ,Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN, Semiconductor Science and Technology,31,3,035001, (2016)
285. Krukowski, Stanisław; Grzegory, Izabella; Boćkowski, Michał; Suski, Tadeusz; Leszczyński, Michał; Perlin, Piotr; Skierbiszewski, Czesław; Porowski, Sylwester; ,"Półprzewodnikowe azotkowe źródła światla-nagroda Nobla z fizyki w 2014 r. dla Isamu Akasaki, Hiroshi Amano i Shuji Nakamury",Kosmos,64,2,211-220,2015,Polskie Towarzystwo Przyrodników im. Kopernika
284. Watson, Scott; Najda, Stephen P; Perlin, Piotr; Leszczynski, Mike; Targowski, Grzegorz; Grzanka, Szymon; Watson, Malcolm A; White, Henry; Kelly, AE; ,Multi-gigabit data transmission using a directly modulated GaN laser diode for visible light communication through plastic optical fiber and water,"Summer Topicals Meeting Series (SUM), 2015",,,224-225,2015,IEEE
283. JL Weyher, J Smalc-Koziorowska, M Bańkowska, I Dzięcielewski, P Perlin, “Photo-etching of GaN: Revealing nano-scale non-homogeneities”, Journal of Crystal Growth 426 153–158 (2015)
282. Marcin Sarzyński, Tadeusz Suski, Robert Czernecki, Ewa Grzanka, Łucja Marona, Aleksander Khachapuridze, Piotr Dróżdż, Katarzyna Pieniak, Jarosław Z Domagała, Michał Leszczyński, Piotr Perlin, “Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts”, Journal of Crystal Growth 423 28–33 (2015)
281. Scott Watson, Stephen P Najda, Piotr Perlin, Mike Leszczynski, Grzegorz Targowski, Szymon Grzanka, Malcolm A Watson, Henry White, AE Kelly, “Multi-gigabit data transmission using a directly modulated GaN laser diode for visible light communication through plastic optical fiber and water”, Summer Topicals Meeting Series (SUM), 2015, 224-225, (2015)
280. M Kuc, RP Sarzała, S Stańczyk, P Perlin, “Numerical investigation of an impact of a top gold metallization on output power of a p-up III-N-based blue-violet edge-emitting laser diode”, Opto-Electronics Review. 23, 131, (2015)
279. Stephen P Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, “AlGaInN laser diode bar and array technology for high power and individually addressable applications” SPIE Defense+ Security, 946604-946604-12 (2015)
278. Anna Kafar, Szymon Stańczyk, Przemek Wiśniewski, Takao Oto, Irina Makarowa, Grzegorz Targowski, Tadek Suski, Piotr Perlin, “Design and optimization of InGaN superluminescent diodes”, Phys. Status Solidi A 212, No. 5, 997–1004 (2015)
277. Agata Bojarska, Łucja Marona, Irina Makarowa, Robert Czernecki, Mike Leszczynski, Tadeusz Suski, Piotr Perlin, “Negative-T0 InGaN laser diodes and their degradation”, Appl. Phys. Lett. 106, 171107 (2015)
276. “SP Najda, P Perlin, T Suski, L Marona, M Boćkowski, M Leszczyński, P Wisniewski, R Czernecki, R Kucharski, G Targowski, S Watson, AE Kelly, MA Watson, P Blanchard, H White”, “AlGaInN laser diode technology for free-space telecom applications”, SPIE LASE, 93540Q-93540Q-11 ((2015)
275. Robert Czernecki, Ewa Grzanka, Julita Smalc-Koziorowska, Szymon Grzanka, Dario Schiavon, Grzegorz Targowski, Jerzy Plesiewicz, Pawel Prystawko, Tadeusz Suski, Piotr Perlin, Mike Leszczynski, “Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells”, Journal of Crystal Growth 414, 38-41, (2015)
274. Stephen P Najda, Piotr Perlin, Tadek Suski, Lujca Marona, Michal Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Julita Smalc-Koziorowska, Szymon Stanczyk, Scott Watson, Antony E Kelly, “Advances in single mode and high power AlGaInN laser diode technology for systems applications”, SPIE OPTO, 93631A-93631A-11, (2015)
273. SP Najda, P Perlin, M Leszczyński, TJ Slight, W Meredith, M Schemmann, H Moseley, JA Woods, R Valentine, S Kalra, P Mossey, E Theaker, M Macluskey, G Mimnagh, W Mimnagh, “A multi-wavelength (uv to visible) laser system for early detection of oral cancer” SPIE BiOS, 932809-932809-6, (2015)
272. Grzegorz Muziol, Henryk Turski, Marcin Siekacz, Pawel Wolny, Szymon Grzanka, Ewa Grzanka, Piotr Perlin, Czeslaw Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy”, Applied Physics Express,8,3,032103,(2015)
271. G Muziol, M Siekacz, H Turski, P Wolny, S Grzanka, E Grzanka, A Feduniewicz-Żmuda, J Borysiuk, K Sobczak, J Domagała, A Nowakowska-Siwińska, I Makarowa, P Perlin, C Skierbiszewski, “High power nitride laser diodes grown by plasma assisted molecular beam epitaxy”, J. Cryst. Growth 425, 398, (2015)
270. Jörg Reitterer, Franz Fidler, Christian Hambeck, Ferdinand Saint Julien-Wallsee, Stephen Najda, Piotr Perlin, Szymon Stanczyk, Robert Czernecki, Stewart D McDougall, Wyn Meredith, Garrie Vickers, Kennedy Landles, Ulrich Schmid, “Integrated RGB laser light module for autostereoscopic outdoor displays”, SPIE LASE, 934619-934619-8 (2015)
269. Stanisław Krukowski, Izabella Grzegory, Michał Boćkowski, Tadeusz Suski, Michał Leszczyński, Piotr Perlin, Czesław Skierbiszewski, Sylwester Porowski, “Półprzewodnikowe azotkowe źródła światla-nagroda Nobla z fizyki w 2014 r. dla Isamu Akasaki, Hiroshi Amano i Shuji Nakamury”, Kosmos 64 (2), 211-220 (2015)
268. Christophe Consejo, Paweł Prystawko, Wojciech Knap, Anna Nowakowska-Siwinska, Piotr Perlin, Michał Leszczynski, "Mechanism of Hydrogen sensing by AlGaN/GaN Pt-gate field effect transistors: magnetoresistance studies", Sensors Journal, IEEE, 15 123 - 127, (2015)
267. O Churiukova, A Jeżowski, P Stachowiak, J Mucha, Z Litwicki, P Perlin, T Suski, „Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods”, Low Temperature Physics 41 (7), 725-728 (2015)
266. Agata Bojarska, Lucja Marona, Robert Czernecki, Alexandr Khachapuridze, Tadek Suski, Piotr Perlin, Igor V Smetanin, "Cavity-Free Lasing and 2D Plasma Oscillations in Optically Excited InGaN Heterostructures", Journal of Russian Laser Research 35, 447-456 (2014)
265. Stephen P Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Scott Watson, Antony E Kelly, "AlGaInN laser diode technology for defence, security and sensing applications", SPIE Security+ Defence, 92540Z-92540Z-7, (2014)
264. Malcolm A Watson, Paul M Blanchard, Chris Stace, Priya K Bhogul, Henry J White, Anthony E Kelly, Scott Watson, Manousos Valyrakis, Stephen P Najda, Lucja Marona, Piotr Perlin, "Assessment of laser tracking and data transfer for underwater optical communications", PIE Security+ Defence, 92480T-92480T-10 (2014)
263. Robert Czernecki, Slawomir Kret, Pawel Kempisty, Ewa Grzanka, Jerzy Plesiewicz, Greg Targowski, Szymon Grzanka, Marta Bilska, Julita Smalc-Koziorowska, Stanislaw Krukowski, Tadek Suski, Piotr Perlin, Mike Leszczynski, "Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers" Journal of Crystal Growth (2014)
262. P Perlin, S Stańczyk, A Kafar, A Bojarska, Ł Marona, R Czernecki, ..."Nitride-based laser diodes and superluminescent diodes", Photonics Letters of Poland 6 (1), pp. 32-34 (2014)
261. SP Najda, P Perlin, T Suski, L Marona, M Bockowski, M Leszczyński, ..., "Advances in AlGaInN laser diode technology", SPIE OPTO, 89861O-89861O-10
260. A Kafar, S Stanczyk, G Targowski, T Suski, P Perlin, "Gain saturation in InGaN superluminescent diodes", SPIE OPTO, 89860P-89860P-9 (2014)
259. T Czyszanowski, S Stańczyk, A Kafar, P Perlin, "Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness", Japanese Journal of Applied Physics 53 (3), 032701 (2014)
258. Marta Sawicka, Grzegorz Muziol, Henryk Turski, Anna Feduniewicz-Żmuda, Marcin Kryśko, Szymon Grzanka, Ewa Grzanka, Julita Smalc-Koziorowska, Martin Albrecht, Robert Kucharski, Piotr Perlin, Czeslaw Skierbiszewski, "Semipolar "(202¯ 1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology B 32 (2), 02C115 (2014)
257. Czesław Skierbiszewski, Henryk Turski, Grzegorz Muziol, Paweł Wolny, Grzegorz Cywiński, Szymon Grzanka, Julita Smalc-Koziorowska, Marta Sawicka, Piotr Perlin, Zbig R Wasilewski, Sylwester Porowski"AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology B 32 (2), 02C112 (2014)
256. H Turski, G Muziol, P Wolny, S Grzanka, G Cywiński, M Sawicka, P Perlin, ..."Cyan laser diode grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters 104 (2), 023503 (2014)
255. Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, Sylwester Porowski "The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays", III-Nitride Semiconductors and their Modern Devices, Oxford University Press
254. S. Stańczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyński, T. Suski, R. Kucharski and P. Perlin, " Graded-index separate confinement heterostructure InGaN laser diodes", Appl. Phys. Lett. 103, 261107 (2013);
253. S Watson, M Tan, SP Najda, P Perlin, M Leszczynski, G Targowski, S Grzanka et al. "Visible light communications using a directly modulated 422 nm GaN laser diode, "Optics Letters 38 (19), 3792-3794 (2013)
252. Agata Bojarska, Jakub Goss, Łucja Marona, Anna Kafar, Szymon Stańczyk, Irina Makarowa, Stephen Najda, Grzegorz Targowski, Tadek Suski, and Piotr Perlin, "Emission wavelength dependence of characteristic temperature of InGaN laser diodes", Appl. Phys. Lett. 103, 071102 (2013);
251. Anna Kafar, Szymon Stanczyk, Grzegorz Targowski, Takao Oto, Irina Makarowa, Przemek Wisniewski, Tadek Suski, and Piotr Perlin, "High-Optical-Power InGaN Superluminescent Diodes with ‘‘j-shape’’ Waveguide", Applied Physics Express 6 (2013) 092102
250. M. Sawicka, G. Muzioł, H. Turski, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, J. L. Weyher, C. Chèze, M. Albrecht, R. Kucharski, P. Perlin, and C. Skierbiszewski, "Ultraviolet laser diodes grown on semipolar (20math1) GaN substrates by plasma-assisted molecular beam epitaxy", Appl. Phys. Lett. 102, 251101 (2013);
249. G. Muzioł, H. Turski, M. Siekacz, M. Sawicka, P. Wolny, P. Perlin, and C. Skierbiszewski, "Determination of gain in AlGaN cladding free nitride laser diodes",Appl. Phys. Lett. 103, 061102 (2013);
248. S. Stanczyk, T. Czyszanowski, A Kafar, R Czernecki, G Targowski, M Leszczynski , "InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate" Applied Physics Letters 102 (15), 151102-151102-4 (2013)
247. Anna Kafar, Szymon Stańczyk, Grzegorz Targowski, Robert Czernecki, Przemek Wiśniewski, Mike Leszczyński, Tadeusz Suski, Piotr Perlin High optical power ultraviolet superluminescent InGaN diodes SPIE OPTO86251S-86251S-7 (2013)
246. Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig R Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski “True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates, SPIE OPTO, 862512-862512-6 (2013)
245. Szymon Stanczyk, Tomasz Czyszanowski, Robert Kucharski, Ania Kafar, Tadek Suski, Łucja Marona, Greg Targowski, Michał Boćkowski, Piotr Perlin “Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate,”SPIE OPTO, 862513-862513-6 (2013)
244. Szymon Stanczyk, Ania Kafar, Grzegorz Targowski, Przemek Wiśniewski, Irina Makarowa, Tadek Suski, Piotr Perlin “Thermal properties of InGaN laser diodes and arrays” SPIE OPTO 862521-862521-9 (2013)
243. SP Najda, P Perlin, T Suski, L Marona, M Boćkowski, M Leszczyński, P Wisniewski, R Czernecki, R Kucharski, G Targowski, - “Latest developments AlGaInN laser diode technology” SPIE OPTO, 862518 862518-8 (2013)
242. T Suski, G Staszczak, SP Łepkowski, P Perlin, R Czernecki, I Grzegory, M Funato, Y Kawakami “Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells”, physica status solidi (b) 249, 476 (2012)
241. T Suski, SP Łepkowski, G Staszczak, R Czernecki, P Perlin, W Bardyszewski, „Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field”, Journal of Applied Physics 112 (5), 053509-053509-11
240. Czeslaw Skierbiszewski, Marcin Siekacz, Henryk Turski, Grzegorz Muziol, Marta Sawicka, Pawel Wolny, Grzegorz Cywiński, Lucja Marona, Piotr Perlin, Przemysław Wiśniewski, Martin Albrecht, Zbigniew R Wasilewski, Sylwester Porowski „True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy”, Applied Physics Express 5 (11), 112103 (2012)
239. S Stanczyk, A Kafar, T Suski, P Wisniewski, R Czernecki, M Leszczynski, M Zajac, P Perlin, „InGaN tapered laser diodes”, Electronics Letters 48, .1232 (2012)
238. O. Guziy, S. Grzanka, M. Leszczyński, P. Perlin, M. Schemmann, and H. W. M. Salemink, “Electronic tuning of integrated blue-violet GaN tunable coupled-cavity laser”, AIP Advances 2, 032130 (2012);
237. A. Kafar, S. Stańczyk, S. Grzanka, R. Czernecki, M. Leszczyński, T. Suski, P. Perlin; “Cavity suppression in nitride based superluminescent diodes”, J. Appl. Phys. 111, 083106 (2012);
236. O. Guziy, S. Grzanka, M. Leszczyński, P. Perlin, and H. W. M. Salemink. , “ Electronic and thermal tuning of violet GaN coupled cavity laser”, Proc. SPIE 8262, 82620W (2012)
235. Lucja Marona, Szymon Grzanka, Robert Czernecki, Jakub Goss, Michal Bockowski, Piotr Perlin, Piotr Kruszewski, Mariusz Pluska, Andrzej Czerwinski; “Estimation of the recombination coefficients in aged InGaN laser diodes”, Proc. SPIE 8262, 826217 (2012)
234. Piotr Perlin, Mike Leszczyński, Michal Boćkowski Tomasz Czyszanowski, Maciej Kuc, Robert Sarzała Anna Kafar, Szymon Stanczyk, Lucja Marona, Tadek Suski, Grzegorz Muzioł Szymon Grzanka, “Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes” Proc. SPIE 8262, 826216 (2012);
233. Marcin Sarzyński, Piotr Perlin, and Michał Leszczyński Tadeusz Suski and Grzegorz Staszczak Anna Reszka and Bogdan Kowalski, “GaN substrates with variable vicinal angles for laser diode applications” Proc. SPIE 8262, 826208 (2012
232. Marcin Sarzyński,, Tadeusz Suski, Grzegorz Staszczak, Aleksander Khachapuridze, Jarosław Z. Domagała, Robert Czernecki, Jerzy Plesiewicz, Joanna Pawłowska, Stephen P. Najda, Michał Boćkowski, Piotr Perlin, Michał Leszczyński, “Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning” Applied Physics Express 5 (2012) 021001
231. Czesław Skierbiszewski, Marcin Siekacz, Henryk Turski, Grzegorz Muzioł, Marta Sawicka, Anna Feduniewicz-Żmuda, Grzegorz Cywiński, Caroline Cheze, Szymon Grzanka, Piotr Perlin, Przemysław Wiśniewski, Zbigniew R. Wasilewski, and Sylwester Porowski “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy”, Applied Physics Express 5 (2012) 022104
230. C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, P. Perlin, S. Grzanka, Z. R. Wasilewski, R. Kucharski, and S. Porowski, “InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE” J. Vac. Sci. Technol. B 30, 02B102 (2012);
229. Staszczak-G; Suski-T; Khachapuridze-A; Perlin-P; Funato-M; Kawakami-Y Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence, Physica-Status-Solidi-A. 2011; 208(7): 1526-8
228. P. Perlin; K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski; C. Skierbiszewski, M. Bockowski; I. Grzegory, T. Suski, “Plasmonic cladding InGaN MQW laser diodes”, Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering. 2011; 7953: 79530I
227. M. Leszczynski, R. Czernecki, S. Krukowski, M. Krysko, G. Targowski, P. Prystawko, J. Plesiewicz, P. Perlin, T. Suski, “Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy” Journal-of-Crystal-Growth.; 318(1): 496-9 (2011)
226. M. Siekacz, M. Sawicka, H. Turski, G. Cywinński, A. Khachapuridze, P. Perlin, T. Suski, M. Boćkowski, J. Smalc-Koziorowska, M. Kryśko, R. Kudrawiec, M. Syperek, J. Misiewicz, Z. Wasilewski, S. Porowski, and C. Skierbiszewski, “Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy”, J. Appl. Phys. 110, 063110 (2011)
225. L. Marona, P. Perlin, R. Czernecki, M. Leszczyński, M. Boćkowski, R. Jakiela, T. Suski, and S. P. Najda, “Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes”, Appl. Phys. Lett. 98, 241115 (2011);
224. Piotr Perlin, Lucja Marona, Katarzyna Holc, Przemek Wisniewski, Tadek Suski, Mike Leszczynski, Robert Czernecki, Stephen Najda, Marcin Zajac, and Robert Kucharski „InGaN Laser Diode Mini-Arrays” Appl. Phys. Express 4 (2011) 062103
223. P. Perlin, K. Holc, M. Sarzyński, M. Leszczyński, R. Czernecki, Ł. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski , I. Grzegory and T. Suski, „Plasmonic cladding InGaN MQW laser diodes ”Proc. of SPIE Vol. 7953 79530I-6 (2011)
222. Katarzyna Holc, Agnieszka Sarzyńska, Michał Boćkowski, Robert Czernecki, Michał Leszczyński,Tadeusz Suski, Robert Kucharski and Piotr Perlin „InGaN mini-laser diode arrays with cw output power of 500 mW” Physica Status Solidi C, 8 issue 4 (2011)
221. S. Grzanka, G. Łuka, T.A. Krajewski, E. Guziewicz, R. Jachymek, W. Purgal, R. Wiśniewska, A. Sarzyńska, A. Bering-Staniszewska, M. Godlewski, P. Perlin „Thin film ZnO as sublayer for electric contact for bulk GaN with low electron concentration” Acta Physica Polonica A 119, 672 (2011)
220. Julita Smalc-Koziorowska, Szymon Grzanka, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Grzegorz Nowak, Michał Leszczynski, Piotr Perlin, Ewa Talik, Jan Kozubowski, Stanisław Krukowski „Ni–Au contacts to p-type GaN – Structure and properties” Solid-State Electronics 54 (2010) 701–709
219. Holc-K; Bielecki-Z; Wojtas-J; Perlin-P; Goss-J; Czyzewski-A; Magryta-P; Stacewicz-T Blue laser diodes for trace matter detection Optica-Applicata. 2010; 40(3): 641-5
218. Katarzyna Holc, Łucja Marona, Robert Czernecki, Michał Boćkowski, Tadeusz Suski, Stephen Najda, and Piotr Perlin „Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures”, J. Appl. Phys. 108, 013110 (2010)
217. S. Grzanka, P. Perlin, R. Czernecki, L. Marona, M. Boćkowski, B. Łucznik, M. Leszczyński, A. Khachapuridze, J. Goss, U. T. Schwarz, and T. Suski „Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes” Phys. Status Solidi C 7, No. 7–8, 1835–1837 (2010)
216. Piotr Perlin, Łucja Marona, , Przemek Wisniewski, Mike Leszczynski, Pawel Prystawko, Michał Boćkowski, Robert Czernecki, Irina Makarowa, Bogdan Kowalski and Tadek Suski, InGaN Laser Diode Degradation. Surface and Bulk Processes” Material Research Society, Symposium Proceedings, in Reliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials, edited by O. Ueda, M. Fukuda, S. Pearton, E. Piner, P. Montanegro (Mater. Res. Soc. Symp. Proc. Volume 1195, Warrendale, PA, 2010) 1195-B01-04
215. Piotr Perlin, Lucja Marona, Mike Leszczyński, Tadek Suski, Przemek Wisniewski, Robert Czernecki, Iza Grzegory.“Degradation mechanisms of InGaN laser diodes”, Proceedings of the IEEE, 98, 1214 (2010)
214. Piotr Perlin, Katarzyna Holc, Marcin Sarzyński, Wolfgang Scheibenzuber, Łucja Marona, Robert Czernecki, Mike Leszczyński, Michał Bockowski, Izabella Grzegory, Sylwester Porowski, Grzegorz Cywiński, Piotr Firek, Jan Szmidt, Ulrich Schwarz, and Tadek Suski „Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes” Appl. Phys. Lett. 95, 261108 ,(2009)
213. Piotr Perlin, Gijs Franssen, Justyna Szeszko, R. Czernecki, Grzegorz Targowski, Marcin, Marcin Kryśko, Szymon Grzanka, Grzegorz Nowak, Elżbieta Litwin-Staszewska, Ryszard Piotrzkowski, Mike Leszczyński, Bolek Łucznik, Izabella Grzegory, Rafał Jakieła, Martin Albrecht, Tadek Suski, “Nitride-based quantum structures and devices on modified GaN substrates” physica status solidi (a) 206, 1130, (2009)
212. K. Holc, M. Leszczynski, T. Suski, R. Czernecki, H. Braun, U. Schwartz, and P. Perlin „Nitride laser diode arrays” , Proc. SPIE 7216, 721618 (2009)
211. J. M. Płuska, A. Czerwiński, J . Ratajczak, J. K ątcki, Ł. Marona, R. Czernecki, M. Leszczyński, P. Perlin, „New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation” Journal of Microscopy, Vol. 236, Pt 2 2009, pp. 137–142
210. S. Grzanka, P. Perlin, R. Czernecki, L. Marona, M. Boćkowski, B. Łucznik, M. Leszczyński, and T. Suski „Effect of efficiency “droop” in violet and blue InGaN laser diodes” Appl. Phys. Lett. 95, 071108 (2009)
209. P. Perlin, T. Świetlik, L. Marona, R. Czernecki, T. Suski, M. Leszczyński, I. Grzegory, S. Krukowski, G. Nowak, G. Kamler, A. Czerwiński, M. Plusa, M. Bednarek, J. Rybiński, S. Porowski “Fabrication and properties of GaN-based lasers”J. Cryst. Growth 310, 3979 (2008)
208. S. Grzanka, G. Franssen, G. Targowski, R. Czernecki, A. Khachapuridze, I. Makarowa, R. Wiśniewska, P. Mensz, P. Perlin, and T. Suski,“Carrier recombination mechanisms in nitride single quantum well light-emitting diodes revealed by photo- and electroluminescence” J. Appl. Phys. 104 094504 (2008)
207. T. Suski, E. Litwin-Staszewska, R. Piotrzkowski, R. Czernecki, M. Krysko, S. Grzanka, G. Nowak, G. Franssen, L. H. Dmowski, M. Leszczynski, P. Perlin, B.Łucznik, I. Grzegory, R. Jakieła, “Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy”Appl. Phys. Lett. 93, 172117 (2008);
206. M. Leszczyński; I. Grzegory; M. Boćkowski; B. Łucznik; T. Suski; P. Perlin; R. Czernecki; G. Targowski; M. Sarzyński; M. Krysko; P. Prystawko; G. Kamler; G. Nowak; S. Porowski “Secrets of GaN substrates properties for high luminousity of InGaN quantum wells” , Proceedings SPIE 2008; 6910, 69100G-1-10 (2008)
205. K. Komorowska; P. Wiśniewski; R. Czernecki; P. Prystawko; M. Leszczyński; T. Suski; I. Grzegory; S. Porowski; S. Grzanka; T. Świetlik; L. Marona; T. Stacewicz; P. Perlin,“16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase” , Proceedings SPIE; 6894, 68940Q-1-7 (2008)
204. L. Marona; P. Wisniewski; M. Leszczyński; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; A. Czerwiński; M. Pluska; J. Ratajczak; P. Perlin “Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability” ,Proceedings SPIE; 6894, 68940R-1-10 (2008)
203. M. Kryśko, G. Franssen, and T. Suski, M. Albrecht, B.Łucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczyński, and P. Perlin “Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates”, Appl. Phys. Lett. 91, 211904 (2007)
202. Marcin Sarzyński, Marcin Kryko, Grzegorz Targowski, Grzegorz Kamler, Jarosaw Domagała, Robert Czernecki, Adam Libura, Piotr Perlin, and Michał Leszczyński “Nitride based laser diodes on substrates with patterned AlN mask” Appl. Phys. Lett. 91, 221103 (2007)
201. S. Bychikhin; T. Świetlik; T. Suski; S. Porowski; P. Perlin; D. Pogany. “Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping”, Microelectronics-Reliability. 47 1649 (2007)
200. T. Świetlik; G. Franssen; C. Skierbiszewski; R. Czernecki; P. Wiśniewski; M. Krysko; M. Leszczyński; I. Grzegory; P. Mensz; S. Jursenas; T. Suski; P. Perlin, “ Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates”Semiconductor-Science-and-Technology. 22, 736 (2007)
199. K. Komorowska; P. Wiśniewski; R. Czernecki; P. Prystawko; M. Leszczyński; T. Suski; I. Grzegory; S. Porowski; S. Grzanka; M. Maszkowicz; P. Perlin, “Tunable broad-area InGaN laser diodes in external cavity” ,Proceedings SPIE . 6485: 648502-1-5 (2007)
198. L. Marona; M. Sarzyński; P. Wińniewski; M. Leszczyński; P. Prystawko; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; G. Kamler; A. Czerwinski; M. Pluska; J. Ratajczak; P. Perlin, “Comprehensive study of reliability of InGaN-based laser diodes” , Proceedings SPIE 6485, 648504-1-12 (2007)
197. T. Tsarova, T. Wosiński, A. Makosa, C. Skierbiszewski, I. Grzegory, P. Perlin, “Deep level defects in MBE grown GaN based laser structure”, Acta Physica Polonica 112, 331 (2007)
196. Skierbiszewski-C; Siekacz-M; Perlin-P; Feduniewicz-Żmuda-A; Cywiński-G; Grzegory-I; Leszczyński-M; Wasilewski-ZR; Porowski-S, “Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE”, Journal-of-Crystal-Growth. 2007; 305(2): 346-54
195. G. Franssen; T. Suski; P. Perlin; R. Bohdan; W. Trzeciakowski; H. Teisseyre; A. Khachapuridze; G. Targowski; K. Krowicki; R. Czernecki; M. Leszczyński; M. Kurouchi; Y. Nanishi; H. Lu; W. Schaff, “Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure” Physica-Status-Solidi-B. 244, 32 (2007)
194. H. Teisseyre; M. Szymański; A. Khachapuridze;C. Skierbiszewski; A. Feduniewicz-Żmuda; M. Siekacz; B. Łucznik; G. Kamler; M. Krysko; T. Suski; P. Perlin; I. Grzegory; S. Porowski, “Optically pumped laser action on nitride based separate confinement heterostructures grown along the (112 0) crystallographic direction” ,Acta-Physica-Polonica-A, 112(2), 467(2007)
193. T. Świetlik; G. Franssen; R. Czernecki; M. Leszczyński; C. Skierbiszewski; I. Grzegory; T. Suski; P. Perlin; C. Lauterbach; UT. Schwarz “Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate”, J. Appl. Phys. 101, 83109 (2007)
192. MP. D'Evelyn; HC. Hong; DS. Park; H. Lu; E. Kaminsky; RR. Melkote P. Perlin; M. Leszczyński; S. Porowski; RJ. Molnar “Bulk GaN crystal growth by the high-pressure ammonothermal method “Journal-of-Crystal-Growth. 300, 11 (2007)
191. H. Teisseyre, C. Skierbiszewski, A. Khachapuridze, A. Feduniewicz-muda, M. Siekacz, B. Łucznik, G. Kamler, M. Kryko, T. Suski, P. Perlin, I. Grzegory, and S. Porowski „Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (110) nonpolar direction” Appl. Phys. Lett. 90, 081104 (2007)
190. S. Grzanka, G. Franssen, G. Targowski, K. Krowicki, T. Suski, R. Czernecki, P. Perlin, and M. Leszczyński, “Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes”,Appl. Phys. Lett. 90, 103507 (2007)
189. C. Skierbiszewski, P. Perlin, I. Grzegory, S. Porowski “Continuous-wave operation of Blue InGaN laser diodes made by plasma assisted MBE”, AIP Conference Proceedings 893, 1409 (2007)
188. T. Świetlik; C. Skierbiszewski; R. Czernecki; G. Franssen; P. Wiśniewski; M. Leszczynski; I. Grzegory; P. Mensz; T. Suski; P. Perlin “Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE”SPIE Proceedings 6473, 64731E-1-8 , (2007)
187. H. Teisseyre, T. Suski, S. Łepkowski, P. Perlin, G. Jurczak, P. Dłużewski, B. Daudin, and N. Grandjean “Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies, Appl. Phys. Lett. 89, 051902 (2006)
186. M. Godlewski; MR. Phillips; K. Kazlauskas; R. Czernecki; G. Targowski; P. Perlin; M. Leszczyński; S. Figge; D. Hommel , “Profiling of light emission of GaN-based laser diodes with cathodoluminescence “,Physica-Status-Solidi-A. May 2006; 203(7), 1811 (2006)
185. S. Krukowski; C. Skierbiszewski; P. Perlin; M. Leszczyński; M. Boćkowski; S. Porowski “Blue and UV semiconductor lasers”, Acta-Physica-Polonica-B. 37, 1265, (2006)
184. C. Skierbiszewski; P. Wiśniewski; M. Siekacz; P. Perlin; A. Feduniewicz-Żmuda; G. Nowak; I. Grzegory; M. Leszczyński; S. Porowski, , “60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy” , Appl. Phys. Lett. 88, 221108 (2006)
183. E. Kuokstis, V. liuolia, S. Miasojedovas, S. Jursenas, A. Zukauskas, M. Leszczyński, P. Perlin, T. Suski, “Stimulated emission and optical gain in nitride-based compounds and quantum structure”, Proceedings SPIE 6596, 659605 (2006)
182. G. Franssen; T. Suski; P. Perlin; R. Bohdan; A. Bercha; W. Trzeciakowski; I. Makarowa; R. Czernecki; M. Leszczyński; I. Grzegory, “Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure”, Physica-Status-Solidi-C. (6), 2303-6 (2006)
181. L. Marona; T. Riemann; J. Christen; T. Świetlik; G. Franssen; P. Wiśniewski; M. Leszczyński; P. Prystawko; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; P. Perlin, “Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals”, Physica-Status-Solidi-A. 203(7), 1778 (2006)
180. P. Perlin“High-power, blue-violet laser diodes”, Elektronika-. 2006; 47(3): 5-8
179. G. Franssen; T. Suski; P. Perlin; R. Bohdan; A. Bercha; W. Trzeciakowski; I. Makarowa; R. Czernecki; M. Leszczyński; I. Grzegory “Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure” Physica-Status-Solidi-C.6 2303, (2006)
178. A. Zukauskas; K. Kazlauskas; G. Tamulaitis; P. Pobedinskas; S. Jursenas; S. Miasojedovas;VYu. Ivanov; M. Godlewski; C. Skierbiszewski;M. Siekacz; G. Franssen; P. Perlin; T. Suski; I. Grzegory“Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates” ,Physica-Status-Solidi-B. 243, 1614 (2006)
177. G. Franssen; T. Suski; P. Perlin; H. Teisseyre; A. Khachapuridze; LH. Dmowski; JA. Plesiewicz; A. Kamińska; M. Kurouchi; Y. Nanishi; W. Schaff““Band-to-band character of photoluminescence from InN and in-rich InGaN revealed by hydrostatic pressure studies”,Appl. Phys. Lett. 2006; 89, 121915 (2006)
176. C. Skierbiszewski; M. Siekacz; P. Wiśniewski; P. Perlin; A. Feduniewicz-Żmuda; G. Cywiński; J. Smal; S. Grzanka; I. Grzegory; M. Leszczyński; S. Porowski “High power continuous wave blue InAlGaN laser diodes made by plasma assisted MBE” Acta-Physica-Polonica-A. 110, 345 (2006)
175. G. Franssen; JA. Plesiewicz; LH. Dmowski ;P. Prystawko; T. Suski; W. Krupczyński ; R. Jachymek ;P. Perlin; M. Leszczyński“Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructures determined by means of capacitance-voltage characterization” , J. Appl. Phys. 100, 113712 (2006)
174. S. Krukowski; C. Skierbiszewski; P. Perlin; M. Leszczyński; M. Boćkowsk;S. Porowski„Blue and UV semiconductor lasers”,Acta Physica Polonica-B. ; 37 1265 (2006)
173. K. Kazlauskas, S. Jursenas, S. Miasojedovas, P. Pobedinskas, G. Tamulaitis, G. Zukauskas, VYu. Ivanov, M. Godlewski,, C. Skierbiszewski, C. Skierbiszewski, M. Siekacz, M. Leszczyński, G. Franssen, P. Perlin, T. Suski, I. Grzegory “Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers” Optica Aplicata 36, 181 (2006)
172. L. Marona, P. Wiśniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, M. Leszczyński, „Degradation mechanisms in InGaN laser diodes grown on bulk GaN substrates” Appl. Phys. Lett. 88, 201111 (2006)
171. T. Świetlik; G. Franssen; P. Wiśniewski; S. Krukowski; SP. Łepkowski; L. Marona,; M. Leszczyński; P. Prystawko; I. Grzegory,; T. Suski; S. Porowski,; P. Perlin; R. Czernecki;A. Bering-Staniszewska, PG. Eliseev, „Anomalous temperature characteristics of single wide quantum well InGaN“, Appl.Phys.Lett. 88: 71121 (2006)
170. M. Sarzyński, M. Kryśko, G. Targowski, R. Czernecki, A. Sarzyńska, A. Libura, W. Krupczyński, P. Perlin, M. Leszczyński, „Elimination of AlGaN epilayer cracking by spatially patterned AlN mask” Appl. Phys. Lett. 88, 121124-1-3 (2006)
169. T. Suski; G. Franssen; P. Perlin; H. Teisseyre; A. Kamińska, ” Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides” Proceedings SPIE; 6121: 61210O-1-7 (2006)
168. P. Wiśniewski; R. Czernecki; P. Prystawko; M. Maszkowicz; M. Leszczyński;T. Suski; I. Grzegory; S. Porowski; M. Marona; T. Świetlik;P. Perlin, “ Broad-area high-power CW operated InGaN laser diodes”, Proceedings SPIE 6133(1), 61330Q-1-10 (2006)
167. L. Marona, T. Riemann, J. Christen, T. Świetlik, G. Franssen, P. Wiśniewski, M. Leszczynski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, P. Perlin “Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals” Physica Status Solidi A, 203, 1778 (2006)
166. BJ. Kowalski, IA. Kowalik, RJ. Iwanowski, J. Sadowski, J. Kański, BA. Orlowski, J. Ghijsen, F. Mirabella, E. Lusakowska, P. Perlin, S. Porowski , I. Grzegory, M. Leszczyński “ Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy” , Thin Solid Films, 476, 396 (2005)
165. VY. Ivanov, M. Godlewski, S. Miasojedovas, S. Jursenas, K. Kazlauskas, A. Zukauskas, C. Skierbiszewski, M. Siekacz, M. Leszczyński, P. Perlin, T. Suski, I. Grzegory “Stimulated emission from the MBE grown homoepitaxial InGaN based multiple quantum wells structure” Acta Physica Polonica 107, 5 (2005)
164. C. Skierbiszewski; P. Perlin; I. Grzegory; ZR. Wasilewski; M. Siekacz; A. Feduniewicz; P. Wiśniewski; J. Borysiuk; P. Prystawko; G. Kamler; T. Suski; S. Porowski „High power blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy” , Semiconductor Science and Technology; 20 809 (2005)
163. G. Franssen, S. Grzanka, R. Czernecki, T. Suski, L. Marona, T. Riemann, J. Christen,H. Teisseyre,P. Valvin, P. Lefebvre, P. Perlin,M. Leszczyński, I. Grzegory, „ Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates” J. Appl. Phys. 97 103507 (2005)
162. H. Teisseyre, C. Skierbiszewski, B. Łucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, S. Porowski„, Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along nonpolar (11-20) direction”, Appl. Phys. Lett. 86, 162112 (2005)
161. G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, W. Trzeciakowski, I. Makarowa, P. Prystawko, M. Leszczyński, I. Grzegory, S. Porowski, S. Kokenyesi, „Fully-screened polarization-induced electric fields in blue/violet InGaN/GaN light emitting devices grown on bulk GaN”, Appl. Phys. Lett. 87, 041109 (2005)
160. G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, P. Adamiec, F. Dybała, W. Trzeciakowski, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, R. Czernecki, M Leszczyński, I. Grzegory „Screening of butli-in electric Fields in group III-nitrides kaser diodes observed by means of hydrostatic pressure”, Physica Status Solidi C 3, 1019 (2005)
159. P. Perlin, T. Suski; M. Leszczyński; P. Prystawko; T. Świetlik; L. Marona; P. Wisniewski; R. Czernecki; G. Nowak; JL. Weyher; G. Kamle; J. Borysiu; E. Litwin-Staszewska; L. Dmowski; R. Piotrzkowski; G. Franssen; S. Grzanka; I. Grzegory; S. Porowski “Properties of InGaN blue laser diodes grown on bulk GaN substrates” ,Journal-of-Crystal-Growth. 281(1): 107 (2005)
158. S. Krukowski, I. Grzegory,M. Boćkowski, B. Łucznik, T. Suski, G. Nowak, J. Borysiuk, M. Wróblewski,M. Leszczyński,P. Perlin,S. Porowski, JL. Weyher „Growth of AlN, GaN and InN from the solution”, International Journal on Materials and Product Technology,22 , 226 (2005)
157. S. Miasojedovas, S. Jursenas, A. Zukauskas, VY. Ivanov, M. Godlewski, M. Leszczyński, P. Perlin, T. Suski „Spontaneus and stimulated emission in quantum structures grown over bulk GaN and sapphire” J. Cryst. Growth 281, 183 (2005)
156. R. Czernecki, G. Franssen, T. Suski, T. Świetlik, J. Borysiuk, S. Grzanka, P. Lefebvre, M. Leszczyński, P. Perlin, I. Grzegory, S. Porowski „Localization effects in InGaN/GaN double heterostructure laser diode structures grown on bulk GaN” Jap. J. Appl. Phys. 44, 7244 (2005)
155. M. Godlewski, MR. Phillips, R. Czernecki, G. Targowski, P. Perlin, M. Leszczyński, S. Figge, D. Hommel „Light emission properties of GaN-based laser diode structure” Acta Physica Polonica A 108, 675 (2005)
153. P. Perlin; L. Marona; T. Świetlik; M. Leszczynski; P. Prystawko; P. Wisniewski; R. Czernecki; G. Franssen; S. Grzanka; G. Kamler; J. Borysiuk; J. Weyher; I. Grzegory; T. Suski; S. Porowski; T. Riemann; J. Christen “Properties of violet laser diodes grown on bulk GaN substrates” Proceedings SPIE 5738(1), 72 (2005)
153. C. Skierbiszewski, Z.R. Wasilewski, M. Siekacz, A. Feduniewicz, P. Perlin, P. Wiśniewski, J. Borysiuk, I. Grzegory, M. Leszczyński, T. Suski, S. Porowski, „Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-asisted molecular beam epitaxy”, Appl. Phys. Lett 86, 011114 (2005)
152. M. Godlewski, EM. Goldys, MR. Phillips, T. Bottcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczyński, P. Perlin, I. Grzegory, S. Porowski “In-depth and in-plane profiling of light emission properties of InGaN-based laser diode” Physica Status Solidi C, no.2,a207 (2004)
151. M. Godlewski, T. Wojtowicz, EM. Goldys, MR. Phillips, R. Czernecki, P. Prystawko, . Leszczyński, P. Perlin, I. Grzegory, S. Porowski, T. Bottcher, S. Figge, D. Hommel, M “In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures” Opto Electronics Review 12, 353 (2004)
150. G. Franssen, A. Kamińska, T. Suski, A. Suchocki, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, R. Czernecki, H. Teisseyre, P. Perlin, M. Leszczyński, M. Boćkowski, I. Grzegory, N. Grandjean „Observation of localization effects in InGaN/GaN quantum structures by means of the aplication of hydrostatic pressure” Physica Status Solidi B 241, 3285 (2004)
149. P. Perlin, M. Leszczyński, P. Prystawko, R. Czernecki, P. Wiśniewski, JL. Weyher, G. Nowak, J. Borysiuk, L. Gorczyca, T. Świetlik, G. Franssen, A. Bering, C. Skierbiszewski, I. Grzegory, T. Suski, S. Porowski „High-power, pulse current operatem violet light emitting lasers grown on bulk GaN substrates” Proceedings SPIE 5365, 288 (2004)
148. P. Perlin , M. Leszczyński, P. Prystawko, P. Wiśniewski, R. Czernecki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Krysko, M. Sarzynski, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Swietlik, I. Grzegory, M. Bockowski, B. Lucznik, S. Porowski, L. Gorczyca, A. Bering, W. Krupczynski, I. Makarowa, R. Wiśniewska, A. Libura., “Low dislocation density, high power InGaN laser diodes” MRS Internet J. Nitride Semicond. Res. 9, 3(2004).
147. O. Yastrubchak, T. Wosiński, A. Makosa, T. Figielski, S. Porowski, I. Grzegory, R. Czernecki, and P. Perlin, „Capture kinetics at dislocation-related deep levels in III-V heterostructures”, Eur. Phys. J. Appl. Phys. 27, 201, (2004)
146. S. Jursenas, N. Kurilcik, G. Kurilcik, S. Miasojedovas, A. Zukauskas,T. Suski, P. Perlin , M. Leszczyński, P. Prystawko, I. Grzegory. „ Optical gain in homoepitaxial GaN” Appl. Phys. Lett., 85, 952 (2004)”
145. S. Miasojedovas, S. Jursenas, G. Kurilcik, A. Zukauskas, VY. Ivanov, M. Godlewski, M. Leszczyński, P. Perlin T. Suski „Luminescence in highly excited InGaN/GaN multiple quantum Wells grown on GaN and sapphire substrate” Acta Physica Polonica A 106, 273, (2004)
144. K. Kazlauskas, G. Tamulaitis, A. Zukauskas,T. Suski, P. Perlin, M. Leszczyński, P. Prystawko, I. Grzegory “Stimulated emission due to spatially separated electron-hole plasma and exciton system in homoepitaxial GaN” Phys. Rev. B.69, 245316 (2004).
143. T. Suski, G. Franssen , P. Perlin, R. Bohdan, A. Bercha , P. Adamiec , F. Dybała, W. Trzeciakowski,P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski. „A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal” , Appl. Phys. Lett. 84, 1236 (2004)
142. P. Prystawko, R. Czernecki, L. Gorczyca, G. Targowski, P. Wiśniewski, P. Perlin, M. Zieliński, T. Suski, M. Leszczyński, I. Grzegory,S. Porowski, „High-power laser structures grown on bulk GaN crystals”, J. Cryst. Growth.272, 274 (2004)
141. G. Franssen , P. Perlin, T. Suski, “Photocurrent spectroscopy as a tool for determining piezoelectric fields in InGaN/GaN multiple quantum well light emitting diodes”, Phys. Rev. B 69, 45310 (2004)
140. T. Suski, H. Teisseyre, S.P. Łepkowski, P. Perlin, H. Mariette, T. Kitamura, Y. Ishida, H. Okumura, and S.F. Chichibu „Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies”; phys. stat. sol.(b) 235, 225 (2003).
139. R. Czernecki, M. Leszczyński, I. Grzegory, P. Perlin, P. Prystawko, C. Skierbiszewski, M. Krysko, M. Sarzyński, P. Wiśniewski, G. Nowak, A. Libura, S. Grzanka, T. Suski, L. Dmowski, E. Litwin-Staszewska, M. Boćkowski, S. Porowski „Bulk GaN crystals grown at high pressure as substrates for blue-laser technology” Physica Status Solidi A 200, 9 (2003)
138. G. Franssen, E. Litwin-Staszewska, R. Piotrzkowski, T. Suski, and P. Perlin, „Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes”, J. Appl. Phys. 94, 6122 (2003).
137. H. Teisseyre, T. Suski, SP. Łepkowski, S. Anceau, P. Perlin,P. Lefebvre, L. Konczewicz, H. Hirayama, Y. Aoyagi. “Determination of built-in electric fields in quaternary InAlGaN heterostructures” ,Appl. Phys. Lett. 1541, (2003)
136. H. Teisseyre, T. Suski, S. P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama, and Y. Aoyagi ; “Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light emitting diodes”, Appl. Phys. Lett. 82, 1541 (2003)
135. M. Godlewski, Vyu Ivanov, EM. Goldys, M. Phillips, T. Bottcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczyński, P. Perlin, I. Grzegory, S.Porowski, „Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - in-plane instabilities of light emission” Acta Physica Polonica A, vol.103, 689 (2003)
134. SP. Łepkowski, T. Suski, P. Perlin, VY. Ivanov, M. Godlewski, N. Grandjea, J. Massies, „Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation” J. Appl. Phys. ,91 9622-9628 (2002)
133. P. Prystawko, R. Czernecki, M. Leszczyński, P. Perlin, P. Wiśniewski, L. Dmowski, H. Teisseyre, T. Suski, I. Grzegory, M. Boćkowski, G. Nowak, S. Porowski „Blue laser structure grown on bulk GaN crystals” Physica Status Solidi A 192, 320 (2002)
132. M. Godlewski, EM. Gołdys, M. Phillips, T. Bottcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczyński, P. Perlin, P. Wiśniewski, T. Suski, M. Bockowski, I. Grzegory, S. Porowski „Relationship between sample morphology and Cartier diffusion length in GaN thin films” Acta Physica Polonica 102, 627 (2002)
131. C. Skierbiszewski, P. Perlin, P. Wiśniewski, T. Suski, JF. Geisc, K. Hinglerl, W. Jantsch, DE. Mars, W. Walukiewicz „Band structure and optical properties of InyGa1-yAs1-xNx” Phys. Rev. B 65, 035207 (2002)
130. P. Perlin, M. Leszczyński, P. Prystawko, R. Czernecki, G. Nowak, P. Wiśniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, I. Grzegory, V. Yu. Ivanov, M. Godlewski, J. Holst, A. Hoffmann „Light emitters fabricated on bulk GaN substrates. Challenges and achievements”, MRS Symposium Proceedings 693, 289 (2002)
129. T. Suski, P. Perlin, SP. Łepkowski, H. Teisseyre, I. Gorczyca, P. Prystawko, M. Leszczyński, N. Grandjean, J. Massie, T. Kitamura, Y. Ishida, SF. Chichibu, H. Okumura, „Piezoelectric field and its influence on the pressure behavior of the light emission from InGaN/GaN and GaN/AlGaN quantum Wells” MRS Symposium Proceedings 693, 487 (2002)
128. T. Suski, H. Teisseyre, SP. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, SF. Chichibu, „Pressure coefficients of the light emission in cubic InGaN epilayers and cubic InGaN/GaN quantum wells”, Physica Status Solidi B 234, 759 (2002)
127. V. Pacebutas, A. Krotkus, T. Suski, P. Perlin, M. Leszczyński „Photocunductive z-scan measurements of multiphonon absorption in GaN” J. Appl. Phys. 92, 6930 (2002)
126. Ching-Hua-Su, W. Pałosz, Shen-Zhu, SL. Lehoczky, I. Grzegory, P. Perlin T. Suski, “Energy gap in GaN single crystals between 293 and 1237 K”J. Crystal Growth 235, 111 (2002)
125. KP. Korona P.Prystawko,M. Leszczyński, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Kuhl, „Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers”, Materials Science and Engineering B 93 (2002)
124. K. Kazlauskas, G. Tamulaitis, A. Zukauskas, P. Prystawko, M. Leszczynski, T. Suski, P. Perlin, I. Grzegory, S. Porowski. „Intrinsic mechanisms of stimulated emission in homoepitaxial GaN” Physica Status Solidi C, no.1, 2002,516 (2002)
123. KP. Korona, P. Prystawko, M. Leszczyński, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Kuhl „Influence of the substrate on the photoluminescence Dynamics in GaInN epilayers” Materials Science and Engineering B, B93, 73 (2002)
122. C. Skierbiszewski, SP. Łepkowski , P. Perlin, T. Suski, W. Jantsch, „ Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells” PHYSICA E 13, 1078 (2002)
121. T. Suski ,H. Teisseyre, SP. Łepkowski ,P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, SF. Chichibu“Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells”,Appl. Phys. Lett., .81, 232 (2002)
120. K. Kazlauskas, G. Tamulaitis, A. Zukauskas, P. Prystawko, M. Leszczyński, T. Suski, P. Perlin “Stimulated emission and optical gain in homoepitaxial GaN” Physica Scripta, T101, 99, „(2002).
119. H. Teisseyre, T. Suski, SP. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Konczewicz, H. Hirayama, Y. Aoyagi ”Small built-in electric fields in quaternary InAlGaN heterostructures” Physica Status Solidi B, 234, 764 (2002)
118. P. Prystawko, R. Czernecki, M. Leszczyński, P. Perlin, P. Wiśniewski, L. Dmowski, H. Teisseyre, T. Suski, I. Grzegory, M. Boćkowski,G. Nowak, S. Porowski „Blue-laser structures grown on bulk GaN crystals.”, Physica Status Solidi A 192, 320 (2002)
117. Ivanov VYu, Godlewski M., Teisseyre H., Perlin P., Czernecki R, Prystawko P, Leszczynski M, Grzegory I, Suski T, Porowski S., “Ultralow threshold powers for optical pumping of homoepitaxial InGaN/GaN/AlGaN lasers”, Appl. Phys. Lett . 81, 3735 (2002)
116. S. Jursenas, G. Kurilcik, N. Kurilcik, G. Tumulaitis, K. Kazlauskas, A. Zukauskas, P. Prystawko, M. Leszczyński, T. Suski, P. Perlin, I. Grzegory, S. Porowski „Luminescence of nonthermalized electron-hole plasma in GaN epilayers”, Proceedings SPIE, 4318, 123 (2001)
115. C. Skierbiszewski, P. Perlin, P. Wiśniewski, A. Presz, T. Suski, J. Geisz, W. Jantsch, D. Mars „Comprehensive study of anomalous conduction band structure of InGaAsN”, MRS Symposium Proceedings 639, G2.5.1-6 (2001)
114. P. Perlin, T. Suski, P. Wiśniewski, I. Gorczyca, S. Łepkowski, M. Hansen, SP. DenBaars, B. Damilano, N. Grandjean, J. Massie „Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures” MRS Symposium Proceedings 639, G9.8.1-6 (2001)
113. M. Leszczyński, P. Prystawko, R. Czernecki, J. Lehnert, P. Perlin, P. Wiśniewski, C. Skierbiszewski, T. Suski, G. Nowak, F. Karouta, J. Holst, I. Grzegory, S. Porowski „Epitaxy on GaN bulk crystals” Proceedings SPIE 4413, 11 (2001)
112. V. Pacebutas, A. Stalnionis, A. Krotkus, M. Leszczyński, P. Perlin, T. Suski „Nonlinear optical characterization of single-crystalline GaN by z-scan technique” Proceedings SPIE, 4318, 135 (2001)
111. M. Leszczyński, P. Prystawko, R. Czernecki, J. Lehnert, T. Suski, P. Perlin, P. Wiśniewski, I. Grzegory, G. Nowak, S. Porowski, M. Albrecht „III-N ternary epilayers grown on GaN bulk crystals”, Journal Crystal Growth, 231, 352 (2001)
110. E. Frassinet, W. Knap, S. Krukowski; P. Perlin ; . P. Wiśniewski; T. Suski; I. Grzegory ; S. Porowski;„Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals”, J. Cryst. Growth, 2001, vol. 230, no 3-4 (277 p.) (16 ref.), pp. 442-447
109. P. Perlin, S.P. Łepkowski, H. Teisseyre, T. Suski , N. Grandjean and J. Massies “The Role of Internal Electric Fields in III-N Quantum Structure”, Acta Physica, Polonica A, vol.100, no.2, Aug. 2001, pp.261-70. Poland.
108. Suski T, Litwin-Staszewska E, Perlin P, Wiśniewski P, Teisseyre H, Grzegory I, Boćkowski M, Porowski S, Saarinen K, Nissila„Optical and electrical properties of Be doped GaN bulk crystals”, J.Cryst. Growth ,230, 368 (2001)
107. V. Pacebutas, A. Stalnionis, A. Krotkus, T. Suski, P. Perlin, M. Leszczyński “Picosecond Z-scan measurements on bulk GaN crystals” Appl. Phys. Lett.,78, 4118 (2001)
106. S. Jursenas, N. Kurilcik, G.Kurilcik, A. Zukauskas, P. Prystawko, M. Leszczyński, T. Suski, P. Perlin, I. Grzegory, S. Porowski,” Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN”; Appl. Phys. Lett., 78, 3776, (2001)
105. P. Perlin, T. Suski, SP. Łepkowski, H. Teisseyre, N. Grandjean, J. Massies „Large built-in electric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells” Physica Status Solidi 188, 839 (2001)
104. P.Perlin, I.Gorczyca, T.Suski, P.Wiśniewski, S.Łepkowski, N.E. Christensen, A. Svane, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean and J. Massies, “Influence of pressure on the optical properties of InGaN epilayers and quantum structures” Phys. Rev. B 64 1153, (2001)
103. S.P. Łepkowski, H. Teisseyre, T. Suski and P. Perlin , N. Grandjean and J. Massies, “Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells”, Appl. Phys. Lett. 79, 1483, (2001)
102. I. Grzegory , M. Bockowski, S. Krukowski, B. Łucznik, M. Wroblewski,JL. Weyher, M. Leszczynski, P. Prystawko, R. Czernecki, J. Lehnert, G. Nowak, P . Perlin, H. Teisseyre, W. Purgal,W. Krupczynski, T. Suski, LH. Dmowski , E. Litwin-Staszewska,C. Skierbiszewski, S. Łepkowski , S. Porowski, „Blue laser on high N2 pressure-grown bulk GaN” Acta Physica Polonica A, vol.100, suppl., 229 (2001)
101. I. Grzegory,S. Krukowski,M. Leszczyński, P. Perlin, T. Suski, S. Porowski „ The application of high pressure in physics and technology of III-V nitrides.” Acta Physica Polonica A, vol.100, 57 (2001)
100. N.A. Shapiro,Y. Kim , H. Feick, E.R. Weber, P. Perlin , J.W.Yang, I. Akasaki , H. Amano “Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain. “Phys. Rev. B..62, .R16318-21 (2000)
99. Yihwan Kim, Subramanya SG, Siegle H, Kruger J, Perlin P, Weber ER, Ruvimov S, Lilliental-Weber Z., “GaN thin films by growth on Ga-rich GaN buffer layers.” J. Appl. Phys., .88, 6032 (2000)
98. H. Teisseyre, T. Suski, P. Perlin, I. Grzegory, M. Leszczyński, M. Boćkowski, S. Porowski, J.A. Freitas, Jr., R.L. Henry, A.E. Wickenden, D.D. Koleske, “Different Character of donor-acceptor pair related 3.27 eV band and blue photoluminescence in GaN:Mg. Hydrostatic pressure studies”, Phys. Rev. B 62, 10151 (2000)
97. N. A. Shapiro, P. Perlin, C. Kisielowski, L. S. Mattos, J. Yang and E. R. Weber “The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells”, MRS Internet J. Nitride Semicond. Res. 5, 1(2000).
96. C. Skierbiszewski, P. Perlin, P. Wiśniewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, E.E. Haller, J.F. Geisz, J.M. Olson “ Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1‑yNxAs1‑x , Appl. Phys. Lett. .76,.2409 (2000).
95. Piotr Perlin, Przemek Wiśniewski, Czesław Skierbiszewski, Tadeusz Suski, Eliana Kamińska, Sudhir G. Subramanya, Eicke R. Weber, Dan E. Mars, Władek Walukiewicz “Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01”, Appl. Phys. Lett. 76, 1279 (2000)
94. J.S. Colton, P. Yu, K.L. Teo, E.R. Weber, P. Perlin, I. Grzegory, K. Uchida “Selective excitation and thermal quenching of the yellow luminescence of GaN”, Appl. Phys. Lett 75, 3273 (1999)
93. J. Kruger, N.A. Shapiro, S. G. Subramanya, Y. Kim, H. Siegle, P. Perlin, E.R. Weber, “The influence of the sapphire on the temperature dependence of the GaN bangap” MRS Wide Bandgap Semiconductors for High Power High Frequency and High Temperature Applications, 1999: 289-94
92. H. Siegle, Y. Kim, S.G. Subramanya, J. Kruger, P.Perlin, J.W. Ager III., C. Kisielowski, E.R. Weber “High quality GaN grown by molecular beam epitaxy on Ge(001)” MRS Wide Bandgap Semiconductors for High Power High Frequency and High Temperature Applications, 1999: 451-6
91. DL. Barton, M. Osiński, P. Perlin, PG. Eliseev, Jinhyun Lee „Single-quantum well InGaN Green light emitting diodes degradation under high electrical stress” Microelectronics Reliability 39, 1219 (1999)
90. C. Skierbiszewski, P. Perlin, P. Wiśniewski, T. Suski, W. Walukiewicz, W. Shan, JW. Ager, EE. Haller, JF. Geisz, DJ. Friedman, JM. Olson, SR. Kurtz „Effect of nitrogen-induced modification of the conduction band structure on electron transport In GaAsN alloys”
,Physica Status Solidi B 216, 135 (1999
89. JS. Colton, PY. Yu, KL. Teo, P. Perlin, ER. Weber, I. Grzegory, K. Uchida „Selective excitation of the yellow luminescencje of GaN” Physica B 273-274, 75 (1999)
88. E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski, P. Perlin, JL. Robert, S. Contreras, D. Wasik, A. Witowski, D. Cote, B. Clerjaud „Electrical properties of GaN single crystals moped with Mg”, Physica Status Solidi B 216, 567 (1999)
87. T. Suski, P. Perlin, C. Skierbiszewski, P. Wiśniewski, L. Dmowski, M. Leszczynski, W. Walukiewicz „Pressure studiem of defects and impurities In initrides” Physica Status Solidi B 216, 521 (1999)
86. T. Suski, P. Perlin, A. Pietraszko, M. Leszczyński, M. Boćkowski, I. Grzegory, S. Porowski
„(GaMg)N – New wide band gap semiconductor Physica Status Solidi A 176, 343 (1999)
85. Tadeusz Suski, Piotr Perlin, Adam Pietraszko, Michał Leszczyński, , Michał Boćkowski, Izabela Grzegory and Sylwester Porowski “(GaMg)N – new semiconductor grown at high pressure of nitrogen” J. Cryst Growth. 207, 27 (1999)
84. P. Perlin, T. Suski, J.W. Ager III., G. Conti, A. Polian, N.E. Christensen, I. Gorczyca, I. Grzegory, E. R. Weber, E. Haller “Transverse effective charge and its pressure dependence in gallium nitride single crystals” Phys. Rev. B, 60, 1480 (1999)
83. DE. Mars, DI. Babic, Y. Kaneko, Ying-Lan-Chang, S. Subramanya, J. Kruger, P. Perlin, ER. Weber „Growth of 1.3 um InGaAsN laser material on GaAs by molecular beam Epitaxy Journal of Vacuum Science and Technology B 17, 1272 (1999)
82. Piotr Perlin, Laila Mattos, Noad A. Shapiro, Joachim Kruger, William S. Wong, Tim Sands, Nathan W. Cheung and Eicke R. Weber “The reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate” J. Appl. Physics, 85, 2385 (1999)
81. P. Perlin, C. Kisielowski, V. Iota, B. A. Weinstein, L. Mattos, N. A. Shapiro, J. Kruger, E. R. Weber, Jinwei Yang “InGaN/GaN quantum wells studied by high pressure, variable temperature and excitation power spectroscopy”, Appl. Phys. Lett. 73, 2778, (1998)
80. Piotr Perlin ,Christian Kisielowski, Laila Mattos, Noad A. Shapiro, Joachim Kruger, Jinwei Yang, Eicke R. Weber “The magnitude of the piezoelectric effect in InGaN quantum wells” MRS Wide Bandgap Semiconductors for High Power High Frequency and High Temperature, 1998: 187-92
79. Piotr Perlin, Valentin Iota, Bernie A. Weinstein, Henryk Teisseyre, Tadeusz Suski, Steeve Hersee, Christian Kisielowski, Eicke R. Weber, Jinwei Yang “High-Pressure Investigation of InGaN quantum wells” MRS Wide Bandgap Semiconductors for High Power High Frequency and High Temperature, 1998: 399-404
78. P. Perlin, S.G. Subramanya, D.E. Mars, J. Kruger, N.A. Shapiro, H. Siegle, E.R. Weber “Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.985N0.015N layer”., Appl. Phys. Lett., 73, 3703 (1998).
77. P. Perlin BA. Weistein, NE. Christensen, I. Gorczyca, V. Iota, T. Suski, P. Wiśniewski, M. Osiński, PG. Eliseev „Cubic InN inclusions as the cause for the unsually weak pressure shift of the luminescencje In InGaN” MRS Nitride Semiconductors Symposium 1998: 697-702
76. W. Shan, P. Perlin, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour “ Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure”,Appl. Phys. Lett. 73, 1613, (1998)
75. DL. Barton, M. Osiński, P. Perlin, CJ. Helms, NH. Berg „Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes” Proceedings SPIE, 3279 17-27 (1998)
74. DL. Barton, M. Osiński, P. Perlin, PG. Eliseev, J. Lee „Degradation of single quantum well InGaN Green light emitting diodes under high electric al stress” 1998-IEEE International Reliability Physics Symposium Proceedings 1998: 119-23
73. Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber “Effect of internal absorption on cathodoluminescence from GaN” MRS Internet J. Nitride Semicond. Res. 3, 4(1998).
72. B. A. Weinstein P. Perlin,, N. E. Christensen, I. Gorczyca, V. Iota, T. Suski, P. Wiśniewski, M. Osiński, P.G. Eliseev “Cubic InN inclusions: proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN - based quantum wells” Solid State Commun. 106, 567 (1998)
71. M. Osiński, P. Perlin, P.G. Eliseev, J. Lee, V.A..Smagley “Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures”, Journal of Crystal Growth, vol.189-190, 803 (1998)
70. M. Osiński, DL. Barton, P. Perlin, Jinhyun-Lee „Effects of high electric al stress on GaN/InGaN/AlGaN single-quantum well light-emitting diodes” J. Crystal Growth 189-90, 808-11 (1998)
69. P.G. Eliseev, P.Perlin, Jinhyun Lee and M. Osiński, "Blue" temperature-induced shift and band-tail emission in InGaN-based light sources”, Appl. Phys. Lett. 71, 569 (1997)
68. DL. Barton, M. Osiński, P. Perlin, CJ. Helms, NH. Berg „Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes” 1997-IEEE International Reliability Physics Symposium Proceedings 1997, 276-81
67. M. Osiński, P. Perlin, PG. Eliseev, J. Furioli „Current transport and emission mechanisms In high-brightness Green InGaN-AlGaN-GaN single quantum well light emitting diodes”, Proceedings SPIE 3002, 15-25 (1997)
66. M. Osiński, DL. Barton, CJ. Helms, NH. Berg, P. Perlin „Life testing and failure ANALYSIS of GaN/AlGaN/InGaN light emitting diodes Proceedings SPIE 3004, 113-20 (1997)
65. C. Wetzel, T.Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fisher, B.K.Meyer, R.J. Molnar, P. Perlin, "Pressure induced deep gap state of oxygen in GaN”, Phys. Rev. Lett. 78, 3923, (1997)
64. Marek Osin´ski, Piotr Perlin, Harald Schöne, Alan H. Paxton and Edward W. Taylor, "Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes" Electronics Letters 33, 1252 (1997)
63. Perlin, V. Iota-Herbei, B.A. Weinstein, P. Wiśniewski, T. Suski, P.G. Eliseev, M. Osiński, "Influence of pressure on the photoluminescence and electroluminescence of GaN/InGAN/AlGaN quantum wells", Appl. Phys. Lett. 70, 2993 (1997)
62. E.W. Taylor; AH. Paxton; H. Schone; JH. Comtois; AD. Sanchez; MA. Michalicek; JE. Winter; S.J. McKinney; M. Osiński; P. Perlin; RF. Carson; JPG. Bristow; J. Lehman; MK. Hibbs-Brenner, “Radiation induced effects research in emerging photonic technologies vertical cavity surface emitting lasers, GaN light emitting diodes, and micro electromechanical devices” Proceedings SPIE - vol.3124, 9-21 (1997)
61. P. Perlin, T. Suski, A. Polian, JC. Chervin, E. Litwin-Staszewska, I. Grzegory, S. Porowski, JW. Erickson „Spatial distribution of elektron concentration and strain In bulk GaN single crystals - relation to growth mechanisms”,MRS III-V Nitrides Symposium 1997, 519-24
60. P.G. Eliseev, P. Perlin, J. Furioli, P. Sartori, J. Mu, A. Osiński, "Tunneling current and electroluminescencein InGaN:Zn,Si/AlGaN/GaN blue light emitting diodes" Journal of Electronic Materials, 26, 311, (1997)
59. P. Perlin, A. Polian, J.C. Chervin, W. Knap, J. Camassel, T. Suski, I. Grzegory, S. Porowski, J.W. Erickson “Coexistance of shallow and localized donors centers in bulk GaN crystals studied by high pressure Raman spectroscopy”, MRS Symposium proceedings edited by: F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar, Vol. 449 "III-V nitrides", p. 689
58. M. Osiński, P. Perlin, P.G. Eliseev, G. Liu, D. Barton "Degradation of single-quantum well InGaN green light emitting diodes under high electrical stress"In Proceedings of Fall MRS Meeting Boston December 1996, MRS Symposium proceedings edited by: F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar, Vol. 449 "III-V nitrides", p. 1179
57. Piotr Perlin, M. Osiński, P.G. Eliseev " Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes" In Proceedings of Fall MRS Meeting Boston December 1996, MRS Symposium proceedings edited by: F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar, Vol. 449 "III-V nitrides", p. 1173
56. EW. Taylor; AH. Paxton; H. Schone; JH. Comtois; AD. Sanchez; MA. Michalicek; JE. Winter; SJ. McKinney; M. Osiński; P. Perlin; RF. Carson; JPG. Bristow; J. Lehman; MK. Hibbs-Brenner „Radiation induced effects research in emerging photonic technologies: vertical cavity surface emitting lasers, GaN light emitting diodes, and micro electromechanical devices” Proceedings SPIE- 1997; 3124: 9-21
55. I. V. Akimova, P.G Eliseev, M. Osiński, P.Perlin "Spontaneus emission of quantum well heterostructure of GaN/InGaN/AlGaN at high pumping current" Kvant. Elektronika, 23 (12) 1069-1072 (1996).
54. P. Perlin, PG. Eliseev, M. Osiński, M. Banas, P. Sartori „Unsusual physical properties of blue light emitting diodes based on InGaN:Zn” Proceedings of 23 ICPS 1996, 2873-6 vol. 4
53. P. Perlin, A. Polian, JC. Chervin, W. Knap, J. Camassel, T. Suski, I. Grzegory, S. Porowski „Metal insulator transition In GaN. Phonons, LO-phonon-plasmon modes and defekt induced Raman spectra” Proceedings of 23 ICPS 1996, 2885-8 vol. 4
52. T. Suski, P. Perlin, M. Leszczyński, H. Teisseyre, I. Grzegory, M. Boćkowski, J. Jun, S. Porowski, Z. Liliental-Weber „Properties of bulk gallium nitride crystals” Proceedings of the First Symposium on III-V Nitride Materials and Processes 1996, 46-57
51. P. Perlin, W. Knap, J. Camassel, A. Polian, JC. Chervin, T. Suski, I. Grzegory, S. Porowski, „Metal insulator transition In GaN crystals”, Physica Status Solidi B 198, 223 (1996)
50. T. Suski, P. Perlin, M. Leszczyński, H. Teisseyre, I. Grzegory, J. Jun, M. Boćkowski, S. Porowski, K. Pakula, A. Wysmolek, JM. Baranowski, „Growth and properties of bulk single crystals of GaN”, First International Symposium on Gallium Nitride and Related Materials 1996, 15-25
49. M. Osiński, P. Perlin, P.G. Eliseev, G. Liu, D. Barton, "Degradation of single-quantum well InGaN green light emitting diodes under high electrical stress" MRS Symposium Proceedings, 449, 1179 (1996)
48. M. Osiński, DL. Barton, CJ. Helms, P. Perlin, NH. Berg, P.Sartori, BS. Phillips „Studies of degradation in Nichia AlGaN-InGaN-GaN blue light emitting diodes under close to normal operation conditions” Compound Semiconductors Electronics and Photonics Symposium 1996, 183-8
47. Piotr Perlin, M. Osiński, P.G. Eliseev "„Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes" , MRS Symposium Proceedings, 449, 1173 (1996)
46. P. Perlin, A. Polian, J.C. Chervin, W. Knap, J. Camassel, T. Suski, I. Grzegory, S. Porowski, J.W. Erickson, "Coexistance of shallow and localized donors centers in bulk GaN crystals studied by high pressure Raman spectroscopy", MRS Symposium Proceedings 449 , 689 (1996)
45. P. Perlin, A. Polian, J.C. Chervin, E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski, "Spatial distribution of electron concentration and strain in bulk GaN crystals - relation to growth mechanisms" MRS Symposium proceedings. 449, 519 (1996)
44. P.G. Eliseev, V.A. Smagley, P. Perlin, P. Sartori, M. Osiński, "Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure", Proceedings SPIE, 2693, 97 (1996)
43. P. Perlin, W. Knap, T. Taliercio, J. Camassel, JL. Robert, T. Suski, I. Grzegory, J. Jun, S. Porowski, JC. Chervin, „Optical characterization of the free electron gas In bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: evidence of phonon-plasmon coupled modes”, Proceedings of the Sixth International Conference on Silicon carbide and Related Materials 1996, 15-25
42. J. Camassel, B. Beaumont, T. Taliercio, JP. Malzac, R. Schwedler, P. Gibart, P. Perlin „Raman and micro-Raman spectroscopy of GaN layers deposited on sapphire”, Proceedings of the Sixth International Conference on Silicon carbide and Related Materials 1996, 959-62
41. Piotr Perlin, Marek Osin´ski, Petr G. Eliseev, Vladimir A. Smagley, Jian Mu, Michael Banas, and Philippe Sartori "Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes" , Appl. Phys. Lett 69, 1680, (1996)
40. J. Zeller, PG. Eliseev, P. Sartori, P. Perlin, M. Osiński „Electrical properties of Nichia AlGaN/InGaN/GaN blue LEDs in a wide current/temperature range ”, First International Symposium on Gallium Nitride and Related Materials 1996, 937-42
39. P. Perlin, E. Litwin-Staszewska, B. Suchanek, W. Knap, J. Camassel, T. Suski, R. Piotrzkowski, I. Grzegory, S. Porowski, E. Kamińska, J. C. Chervin "Determination of the effective mass of GaN from infrared reflectivity and Hall efect", Appl. Phys. Lett. 68 1114 (1996)
38. PG. Eliseev, VA. Smagley, P. Perlin, P. Sartori, M. Osiński „Analisis of impurity-related blue emission In Zn-doped GaN/InGaN/AlGaN double heterostructure” Proceedings SPIE 2693, 97 (1996)
37. T. Suski P. Perlin; H. Teisseyre; M. Leszczyński; I. Grzegory; J. Jun; S. Porowski; TD. Moustakas „Epitaxial layer versus bulk single crystal of GaN” 22nd-International-Conference-on-the-Physics-of-Semiconductors. 1995: 397-400 vol.1 World Scientific, Singapore
36. P. Perlin, H. Teisseyre, T. Suski, M. Leszczyński, , I. Grzegory, J. Jun, S. Porowski, „High pressure freezout of electrons in undoped GaN crystals. Proof of an existance of of the resonant donor state (nitrogen vacancy?) 22nd-International-Conference-on-the-Physics-of-Semiconductors. 1995: 2383-6 vol 3 World Scientific, Singapore
35. H. Teisseyre, T. Suski, P. Perlin, I. Gorczyca, M. Leszczyński, I. Grzegory, J. Jun, S. Porowski, „Luminescence of doped and undoped bulk crystals of GaN”, Materials Science Forum 196-201, 43 (1995)
34. Suski, P. Perlin, H. Teisseyre, M. Leszczyński, I. Grzegory J. Jun, M. Boćkowski and S. Porowski. “Mechanism of Yellow Luminescence in GaN” Appl. Phys. Lett. 67, 2188, (1995)
33. P. Perlin, J. Camassel, W. Knap, , T. Taliercio, J.C. Chervin, T. Suski, I. Grzegory and S. Porowski. “Investigations of LO phonon-plasmon coupled modes in highly conducting bulk GaN” Appl. Phys. Lett. 67, 2524, (1995)
32. P. Perlin,T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J.Jun, S. Porowski, P. Bogusławski, J. Bernholc, J.C. Chervin, A. Polian, T.D. Moustakas. “Towards the identification of the dominant donor in GaN” Phys. Rev. Lett. 75, 296 (1995)
31. M. Leszczyński, T. Suski, P. Perlin, H. Teisseyre, I. Grzegory, M. Boćkowski, J. Jun, S. Porowski, J. Major “Lattice constants, thermal expansion and compressibility of gallium nitride”, J. Physics D :Applied physics 28, A149, (1995)
30. P. Perlin, T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J. Jun, M. Bockowski, "Free-electrons and resonant donor state in Gallium Nitride" Materials Science Forum 196 23 (1995)
29. H. Teisseyre, P. Perlin, T. Suski, M. Leszczyński, I. Grzegory, J. Jun, S. Porowski „Epitaxial layers versus bulk single crystals of GaN. Temperature studiem of lattice parameters and energy gap.” Acta Physica Polonica 87, 403 (1995)
28. T.P. Sosin. P. Perlin, W. Trzeciakowski and R. Tober, “Absorption and Photoluminescence under Pressure in InGaAs/GaAs Strained Quantum Well”, J. Phys. Chem Solids 56, 419, (1995)
27. P. Perlin, H. Teisseyre, T. Suski, M. Leszczyński, I. Grzegory, J. Jun, S. Porowski, „High –pressure freeze-out of electrons In undoped GaN crystals. Proof of existance of resonant donor state (nitrogen vacancy?), Acta Physica Polonica 87, 403 (1995)
26. P. Perlin, S. Shilo, T. Sosin, W. Trzeciakowski, G. Karczewski, T. Wojtowicz, E. Janik, A. Zakrzewski, R. Kutrowski, J. Kossut, “ The effect of pressure on the luminescence of CdTe/CdMnTe quantum well”, J. Phys. Chem Solids 56, 415, (1995)
25. P. Perlin, W. Trzeciakowski and T. Sosin, “The effect of G-X mixing on the direct excitonic photoluminescence in GaAs/AlGaAs quantum wells” J. Phys. Chem Solids 56, 411, (1995)
24. H. Teisseyre, P. Perlin, T. Suski, M. Leszczyński, I. Grzegory, J, Jun, S. Porowski, “Photoluminescence in doped GaN crystal”, J. Phys. Chem Solids 56, 353, (1995)
23. D. Galanciak, P. Perlin, M. Grinberg, A. Suchocki, "High pressure spectroscopy of LLGG doped with Cr3+." J. Lumin. 60,61, 223, (1994)
22. P. Perlin, W. Trzeciakowski, E. Litwin-Staszewska, J. Muszalski, M. Mikovic, „The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells“ Semiconductora Science and Technology 9, 2239, (1994)
12. T.P. Sosin, P. Perlin, W. Trzeciakowski, R. Tober and R. Zarecka, "New results on the optical sensors based on semiconductor quantum well." Sensors and Actuators A, 41-42, 654-657 (1994)
20. M. Leszczyński, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski and T.D. Moustakas, "Thermal Expansion of Gallium Nitride", J. Appl. Phys 76, 4909 (1994)
19. H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas, "Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer", J. Appl. Phys 76, 2429, (1994)
18. P. Perlin, A. Polian, and T. Suski , "Raman cattering studies of aluminium nitride at high pressure. ", Phys. Rev. B 47, 2874 (1993)
17. T. P. Sosin, P. Perlin, W. Trzeciakowski, R. Tober, "Interband absorption in InGaAs/GaAs quantum well at high hydrostatic pressure.", Acta Physica Polonica 84, 749 (1993)
16. I. Grzegory, J. Jun, S. Krukowski, P. Perlin, S. Porowski, "InN Thermodynamics and Crystal Growth at High Pressure of N2.", Jpn. J. Appl. Phys. 32, 343 (1993)
15. W. Trzeciakowski, E. Litwin Staszewska, P. Perlin., “Semiconductor Pressure Sensors as Seen by a Physicist ", Jpn. J. Appl. Phys. 32, 328 (1993)
14. Jpn. J. Appl. Phys., 32, 334, (1993)
13. P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. Christensen, A. Polian
12. P.Perlin, A. Polian, J.P. Itie, I. Grzegory, E. Litwin-Staszewska and T. Suski. "Physical properties of GaN and AlN under pressure up to 0.5 Mbar. ", Physica B 185, 426, (1993)
11. M. Lindner, S.H.L. Zott, G.F. Schötz, W. Gebhardt, P. Perlin, P. Wiśniewski , "The exitonic absorption of CdS under pressure ",High Pressure Research 10, 408 (1992)
10. P. Perlin, I. Gorczyca, N.E. Christensen, I. Grzegory, H. Teisseyre and T. Suski , "Pressure Studies f Gallium Nitride Crystal growth and fundamental electronic properties, "Phys. Rev. B 45, 13307 (1992)
9. P. Perlin, I. Gorczyca, H. Teisseyre, T. Suski, E. Litwin-Staszewska, S. Porowski, I. Grzegory", III-V semiconducting nitrides. Energy gap under pressure. ", Acta Physica Polonica 82,674 (1992).
8. P. Perlin, C. Jauberthie-Carillon, J.P. Itie, A. San Miguel, I. Grzegory and A. Polian ,"Raman scattering and x-ray absorption spectroscopy in gallium nitride under high pressure”.,Phys. Rev. B, 45, 83 (1992)
7. W. Trzeciakowski, P. Perlin, H. Teisseyre, C.A. Medonca, M. Micovic, P.Ciepielewski, E. Kamińska , "Optical pressure sensors based on semiconductor quantum wells", Sensors and Actuators A 32, 623 (1992).
6. I. Gorczyca, N.E. Christensen, P. Perlin, I. Grzegory, J. Jun, M. Boćkowski "High Pressure Phase Transition in Aluminium Nitride " Solid State Commun. 79, 1033, (1991)
5. P. Perlin, I. Gorczyca, N.E. Christensen, H. Teisseyre, T. Suski, I. Grzegory , "Band structure and refractive index of gallium nitride under pressure", Acta Physica Polonica A 3, 421 (1991)
4. P. Perlin, C. Jauberthie-Carillon, J.P. Itie, A. San Miguel, I. Grzegory and A. Polian , "High pressure phase transition in in gallium nitride. ", High Pressure Research 7-8, 96, (1991)
3. P. Perlin, T. Suski, M. Lindner, W. Gebhardt , "High Pressure studies of optical properties and crystal lattice stability of ZnFeSe ", Proceedings of 12 AIRAPT and 27 EHPRG Conference Paderborn 1989 , High Pressure Research 3, 96, 1990
2. P. Perlin, Z. Liro, A. Twardowski and M. Demianiuk , "Anomalous pressure dependence of absorption edge of ZnFeSe semimagnetic semiconductor” Semicond. Sci. Technol. 4, 269, (1989)
1. M.I. Eremets, V.V. Struzhkin, A.M. Shirokov, J. Jun, I. Grzegory and P. Perlin ,"Raman scattering in GaN crystal under pressure up to 200 kbar", Acta Physica Pol. A 75, 875 (1989)