Project HOMING „Polarity engineering in nitride heterostructures”
HOMING Programme funded by Foundation for Polish Science offers grants to young Doctors who come to Poland (regardless of their nationality) to conduct their postdoctoral research.
The project focuses on nitride vertical devices with inverted built-in polarization fields in structures grown on Ga-polar GaN substrates. To build such devices we will exploit unique features of n-p tunnel junctions (TJ). Growth of n-p TJ preceding the active region of the device allows to incorporate the active region within the p-n configuration rather than the commonly used n-p one. This results in an inverted built-in electric field direction inside the active region. Additionally, such devices will profit from having the n-type layer on the top. We will show that both features can lead to new applications of light emitting devices, laser diodes and transistors. Unique capabilities of the plasma-assisted molecular beam epitaxy system (high growth rate nitrogen plasma source, high Mg flux cell and Ge doping) installed in Warsaw will be crucial for samples growth.
Articles published as a result of the HOMING Project:
"Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices", G. Muziol, H. Turski, M. Siekacz, K. Szkudlarek, L. Janicki, M. Baranowski, S. Zolud, R. Kudrawiec, T. Suski, C. Skierbiszewski, Acs Photonics, 6 (2019) 1963-1971.
"Buried tunnel junction for p-down nitride laser diodes", H. Turski, M. Siekacz, G. Muziol, M. Zak, S. Bharadwaj, M. Chlipala, K. Nowakowski-Szkudlarek, M. Hajdel, H.G. Xing, D. Jena, C. Skierbiszewski, in: 2019 Device Research Conference (DRC), 2019, pp. 241-242.
"Gallium nitride tunneling field-effect transistors exploiting polarization fields", A. Chaney, H. Turski, K. Nomoto, Z. Hu, J. Encomendero, S. Rouvimov, T. Orlova, P. Fay, A. Seabaugh, H.G. Xing, D. Jena, Applied Physics Letters, 116 (2020) 073502.
"Nitride light-emitting diodes for cryogenic temperatures", M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski, Optics Express, 28 (2020).
"Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs", A. Reszka, K.P. Korona, S. Tiagulskyi, H. Turski, U. Jahn, S. Kret, R. Bożek, M. Sobanska, Z.R. Zytkiewicz, B.J. Kowalski, Electronics, 10 (2020).
"Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions", M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 (2020).
"Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design", H. Turski, S. Bharadwaj, M. Siekacz, G. Muziol, M. Chlipala, M. Zak, M. Hajdel, K. Nowakowski-Szkudlarek, S. Stanczyk, H. Xing, D. Jena, C. Skierbiszewski, H. Morkoç, H. Fujioka, U.T. Schwarz, in: Gallium Nitride Materials and Devices XV, 2020.
"Nitride LEDs and Lasers with Buried Tunnel Junctions", H. Turski, M. Siekacz, G. Muziol, M. Hajdel, S. Stanczyk, M. Zak, M. Chlipala, C. Skierbiszewski, S. Bharadwaj, H.G. Xing, D. Jena, Ecs Journal of Solid State Science and Technology, 9 (2020) 015018.
"Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction", K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S. Grzanka, C. Skierbiszewski, T. Suski, Optics Express, 29 (2021).
"Enhanced efficiency in bottom tunnel junction InGaN blue LEDs", L. van Deurzen, S. Bharadwaj, K. Lee, V. Protasenko, H. Turski, H. Xing, D. Jena, M. Strassburg, J.K. Kim, M.R. Krames, in: Light-Emitting Devices, Materials, and Applications XXV, 2021.
Project will be carried out in collaboration with groups at Cornell University and Wroclaw University of Technology.