Institute of High Pressure Physics

Today, November 13, 2025, the inauguration of the European Wide Band Gap Semiconductors Pilot Line – Polish Node project took place in the Leonard Sosnowski Auditorium of the Institute of Physics PAS. The event was organized by the Łukasiewicz Institute of Microelectronics and Photonics. The first European-level WBG Pilot Line project meeting took place on October 1, 2025, in Rome.

Today's event officially inaugurates the Polish node within the European Wide Band Gap Semiconductor Pilot Line, implemented as part of the Chips Joint Undertaking.

Two Polish institutes are involved: the Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS) and Łukasiewicz Institute of Microelectronics and Photonics (IMiF). The project's objectives include developing production lines for 4-inch GaN substrates, improvement of existing technologies for epitaxial growth and processing of nitride structures for high-power devices, and advancement of new types of diodes and transistors.

The meeting included a lecture by Professor Tetsuo Narita from Toyota Central R&D Labs and Nagoya University, the symbolic unveiling of a time capsule, and presentations by the project partners.