Institute of High Pressure Physics

The Foundation for Polish Science (FNP) has awarded the Institute of High Pressure Physics PAS funding to develop the Centre for Physics and Technology of Nitride Semiconductors “GaN-Unipress.” The International Research Agendas Programme (IRAP FENG) focuses on industrial research and experimental development (basic research is not funded).

Leadership and structure
Project integrates the full spectrum of activities "from material to specific device" in one dedicated center. The IRAP Director is Prof. Michał Boćkowski (IHPP PAS), who also leads WP3. Work-package leaders are: Dr Robert Kucharski (WP1), Dr Tomasz Sochacki (WP2), and Assoc. Prof. Paweł Kempisty (WP4).

The project encompasses four research areas, forming a complete value chain – from material to device and design algorithms:

• WP1: Ammonothermal GaN crystal growth and high-quality substrates (targeting 4-inch GaN).
• WP2: GaN-on-GaN power diodes (p-n, p-i-n, Schottky/JBS) with low losses and high breakdown voltages.
• WP3: Rare-earth-doped GaN as a platform for single-photon sources and quantum sensors, leveraging the proprietary ion implantation + ultra-high-pressure annealing (I/I+UHPA) route.
• WP4: Materials informatics — AI/ML for growth, device design and diagnostics.

Key partnerships
The project will be supported by strong partnerships. WP3 will be developed with the Solid-State Physics Division, Faculty of Physics, University of Warsaw, while WP4 is supported by the AI and Computational Methods Division, Faculty of Mathematics and Information Science, Warsaw University of Technology. Our strategic international partner is CNR-IMM, Italy (Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi), including the team of Dr Fabrizio Roccaforte.

Impact
By integrating state-of-the-art GaN materials and devices with AI-driven optimisation, “GaN-Unipress” will accelerate advances in power electronics and quantum technologies with strong pathways to commercialisation, strengthening Poland’s position on the global map of nitride semiconductor research.

Find out more about the IRA Programme and Call 2/2025 results.