Institute of High Pressure Physics

We are happy to share the press release summarizing the GaN4AP project that focused on harnessing the unique properties of GaN to create more efficient, reliable, and high-performance power systems.

GaN for Advanced Power Applications (GaN4AP) involved 36 project partners: private companies, universities, and public research organizations from 6 European countries. The Institute of High Pressure Physics PAS contributed to the developemnt of high-quality bulk GaN substrates, key-enabling element of the novel architecture vertical power devices.

The European project GaN4AP (Gallium Nitride for Advanced Power Applications) was launched in June 2021 as part of the EU’s H2020-ECSEL-2020-1-IA initiative. It was funded by the Chips JU Public-Private Partnership and by the National Authorities and it has significantly advanced the field of power conversion systems, marking a key milestone in the global energy transition.

More at the project Website: https://www.gan4ap-project.org/