Institute of High Pressure Physics

In the latest paper "Deep-level point defects at Ga sites in dilute Al_xGa_1−xN alloys" our colleague, Dr. Piotr Kruszewski, along with collaborators, presented new evidence indicating that the electron trap E1 in Al_xGa_1−xN layers - and likely also in GaN - is associated with a point defect located in the gallium sublattice, rather than the nitrogen sublattice, as was commonly believed. Additionally, based on theoretical calculations (Heyd-Scuseria-Ernzerhof - HSE), it was proposed that the donor responsible for the electronic level of the E1 trap is either carbon or molybdenum, corresponding to C_Ga(0/+) or Mo_Ga(0/+), respectively.

The paper has been highlighted as the Applied Physics Letters Editor's Pick and is available here: https://doi.org/10.1063/5.0272389