Institute of High Pressure Physics

We are pleased to inform you that our colleague from laboratory NL-12, Dr. Piotr Kruszewski, will represent our Institute at the ICDS-33 conference - 33rd International Conference on Defects in Semiconductors, which will take place from September 14 to 19, 2025, in Shanghai, China. ICDS conference is one of the most prestigious international conferences dedicated to defect research in semiconductors, and the first conference of this series was initiated in 1959 in Gatlinburg, Tennessee, USA.

A significant honor for our Institute is the fact that Dr. Piotr Kruszewski will deliver two oral presentations in Shanghai. The first one is focused on defect studies in Al_xGa_1-xN layers and is titled "On the origin of the electrically active defects E1 and E3 in GaN and dilute Al_xGa_1-xN films grown on Ammono-GaN substrates" while the second presentation addresses defects in gallium oxide (Ga₂O₃) and the influence of an electric field on the defect properties Ec-0.18 eV in crystals grown by the Czochralski method. The full title of this paper is "The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga₂O₃ crystals grown by the Czochralski method"

More information about the conference, as well as the detailed program, can be found at https://www.icds2025.org/