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TeamTech

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Project TeamTech

A universal process for overcoming the equilibrium crystal shape in crystal growth from the vapor phase

Project is carried out from 1st October 2018 to 31st March 2022

Programme Description

Project is carried out within the TeamTech programme of the Foundation for Polish Science. Programme TEAM-TECH is co-funded in the framework of Program Operacyjny Inteligentny Rozwój (PO IR) oraz Foundation for Polish Science. Programme TEAM-TECH offers grants for research teams headed by leading scientists carrying out R&D projects related to a new product or production process (technological or manufacturing) of significant importance for the economy.

Project Goal

The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The equilibrium crystal shape can be overpowered by a proper thermal field design and that the crystal will follow the thermal field and grow in a direction perpendicular to the isotherms.

International Collaboration

Project is carried out in collaboration with:

Department of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC, USA

Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, (Amano Laboratory), Japan

Publications

Project results have been published in:

  1. M. Amilusik, D. Wlodarczyk, A. Suchocki, M. Bockowski, Jpn. J. Appl. Phys. 58 SCCB32 (2019)
  2. M. Iwinska, M. Zajac, B. Lucznik, M. Fijalkowski, M. Amilusik, T. Sochacki, E. Litwin-Staszewska, R. Piotrzkowski, I. Grzegory, M. Bockowski, Jpn. J. Appl. Phys. 58 SC1047 (2019)
  3. M. Amilusik, T. Sochacki, M. Fijalkowski, B. Lucznik, M. Iwinska, A. Sidor, H. Teisseyre, J. Domagała, I. Grzegory, M. Bockowski, Jpn. J. Appl. Phys. 58 SC1030 (2019)
  4. T. Sochacki, S. Sintonen, J. Weyher, M. Amilusik, A. Sidor, M. Bockowski, Jpn. J. Appl. Phys. 58 SCCB19 (2019)

Master theses

There were two Master degree students with scholarships for 10 months in the project. The students defended their Master theses with excellent notes at the Faculty of Physics of the Warsaw University of Technology. The subjects of their theses were correlated to the main subject of the project. The students were examining doping processes for n-type and semi-insulating (SI) GaN crystals. The supervisor of both theses was the PI of this project prof. M. Bockowski. The titles of the theses were as follows:
 
  1. Influence of growth temperature and pressure on donor dopants in gallium nitride (GaN) crystallized from gas phase by HVPE method
  2. Examination of physical properties of bulk, semi-insulating gallium nitride (GaN) crystal grown by HVPE method

Lectures

Project results have been presented by:

  1. M. Bockowski, Bulk growth of GaN. How to overcome the equilibrium crystal shape? APWS2019, 10th-15th November, Okinawa, Japan, - invited lecture
  2. M. Bockowski, GaN-on-GaN technology; challenges and perspectives. CIRFE, IMaSS, Nagoya University, 07th October 2019 Japan - invited lecture
  3. T. Sochacki, Crystallization of GaN by HVPE method with controlled lateral growth, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA – invited lecture
  4. T. Sochacki, HVPE-GaN Doped with Carbon and/or Manganese, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA - contributed
  5. T. Sochacki, Thick GaN crystals of high purity grown with an increased rate by ammonobasic method, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA, - contributed
  6. M. Amilusik, Point defects in GaN:Mg crystals grown by ammonothermal method ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA, - contributed
  7. M. Amilusik, Detailed study of HVPE-GaN doped with silicon, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA - contributed
  8. M. Amilusik, Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA- poster
  9. M. Zajac, Thick GaN crystals of high purity grown with an increased rate by ammonobasic method, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA - contributed
  10. M. Zajac, P-type conductivity of GaN:Zn monocrystals obtained by ammonothermal method, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  11. M. Zajac, ICNS-13, Point defects in GaN:Mg crystals grown by ammonothermal method, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  12. M. Iwinska, Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  13. M. Iwinska, HVPE-GaN Doped with Carbon and/or Manganese, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  14. B. Lucznik, Detailed study of HVPE-GaN doped with silicon, ICNS -13, 7th-12th July, 2019 Bellevue, Washington, USA – poster
  15. B. Lucznik, Crystallization of GaN by HVPE method with controlled lateral growth, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA –contributed
  16. M. Bockowski, Bulk growth of GaN. How to overcome the equilibrium crystal shape?, MGCTF2019, St. Petersburg, Russia, 1-5 July, 2019 – invited lecture
  17. T. Sochacki, GaN Substrates of the Highest Structural Quality, CIRFE, IMaSS, Nagoya University, 27th May 2019 Japan - invited lecture
  18. T. Sochacki, GaN Substrates of the Highest Structural Quality, CSW2019, 19th-23rd May 2019 Nara, Japan - invited lecture
  19. M. Bockowski, Bulk Growth of GaN-status, perespectives and trends; GPCCG3, Poznan, 17th-21st March, 2019 - invited lecture
  20. M. Iwinska, Semi-insulating HVPE-GaN grown on native seeds, SPIE, Photonics West 2019, 3rd-7th February, San Francisco, USA - contributed
  21. M. Iwińska, Influence of different dopants on the properties of bulk GaN, 4th IDGNS, 18th-20th November, Sendai, Japan –invited lecture
  22. M. Amilusik, Micro-Raman Studies of Strain in Bulk GaN Crystals Grown by Hydride Vapor Phase Epitaxy on Ammonothermal GaN Seeds, IWN2018, 11th-16th November, Kanazawa, Japan –poster
  23. M. Amilusik, Growth of GaN:Mg by Hydride Vapor Phase Epitaxy, IWN2018, 11th-16th November, Kanazawa, Japan –contributed
  24. M. Amilusik, Homoepitaxial Growth by Hydride Vapor Phase Epitaxy of Semi-Polar GaN on Ammonothermal Seeds, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  25. B. Lucznik, Gradient of silicon concentration in HVPE-GaN, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  26. M. Iwińska, Highly resistive HVPE-GaN grown on native seeds - investigation and comparison of different dopants, , IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  27. T. Sochacki Crystallization of GaN by HVPE method with controlled lateral growth, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  28. M. Bockowski, Combination of advantages of HVPE and ammonothermal methods as a solution for crystallization of GaN, IWN2018, 11th-16th November, Kanazawa, Japan –invited lecture