Laboratory of Nitride Semiconductor Physics


Book chapters

I. Grzegory, M. Bockowski, P. Perlin, C. Skierbiszewski, T. Suski, M. Sarzynski, S. Krukowski and S. Porowski, "The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays",
III-Nitride Semiconductors and their Modern Devices, editor Bernard Gil, Oxford University Press 2013, ISBN 978-0-19-968172-3.

P. Perlin, M. Leszczyński, P. Prystawko, M., Boćkowski, I. Grzegory, C. Skierbiszewski, T. Suski „Laser diodes grown on gallium nitride substrates”, III- Nitride Devices and NanoEngineering, editor Zhe Chuan Feng, pp 223-252, Imperial College Press, London 2008

P. Perlin, M. Leszczyński, T. Suski Handbook of Semiconductor, Nanostructures and Nanodevices, Edited by A. A. Balandin and K. L. Wang, Volume 4: Pages (1–43) (2007)

P. Perlin, T. Suski, M. Leszczynski, H. Teisseyre "Physical properties of the bulk GaN crystals grown by the high-pressure, high-temperature-method" in GaN and Related Materials, Optoelectronic Properties of Semiconductors and Superlattices vol 2.pp315-332 (1997) ed. S.J. Pearton, Gordon and Breach Science Publishers, Amsterdam

N. E Christensen and P. Perlin "Phonons and phase transition in GaN" in Gallium Nitride-GaN I, Semiconduct. Semimet.50, pp. 409-429 ed. J. Pankove, Academic Press, SaN Diego 1997

T. Suski, P. Perlin "High pressure studies of defects and impurities in gallium nitride" in Gallium Nitride-GaN I, Semiconduct. Semimet.50, pp. 279-303 ed. J. Pankove, Academic Press, SaN Diego 1997

Selected papers

Piotr A. Dróżdż, M. Sarzyński, J. Z. Domagała et al., Monolithic cyan - violet InGaN/GaN LED array. Physica Status Solidi A (accepted in 2017).

P. Prystawko, M. Sarzynski, A. Nowakowska-Siwinska et al., AlGaN HEMTs on patterned resistive/conductive SiC templates,  J. Crystal Growth 464, 159-163(2017).

I.Gorczyca, T. Suski, N.E. Christensen, and A. Svane
Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys
Phys. Rev. B93, 165302 (2016).

M Sarzyński, T. Suski, R. Czernecki et al., Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts, J. Crystal Growth, 423, 28 (2015).

T. Suski, T. Schulz, M. Albrecht, X. Q. Wang, I. Gorczyca, K. Skrobas, N. E. Christensen, and A. Svane
The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy
Appl. Phys. Lett. 104, 182103 (2014).

L. Guo, X. Q. Wang, X. T. Zheng, X. L. Yang, F. J. Xu, N. Tang, L. W. Lu, W. K. Ge, B. Shen, L. H. Dmowski and  T. Suski
Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement
Scientific Reports, 4, 4371 (2014).

G. Staszczak, I. Gorczyca, T. Suski, X. Q. Wang, N. E. Christensen, A. Svane, E. Dimakis, and T. D. Moustakas
Photoluminescence and pressure effects in short period InN/nGaN superlattices
J. Appl. Phys., 113, 123101 (2013)

M. Sarzyński, T. Suski, G. Staszczak et al., Lateral control of indium content and wavelength of the III-Nitride diode lasers by means of the GaN substrate patterning, Appl. Phys. Express 5, 021001 (2012).

I.Gorczyca, T. Suski, N.E. Christensen, and A. Svane
Size effects in band gap bowing in nitride semiconducting alloys
Phys. Rev B83, 153301 (2011).

S. Grzanka, P. Perlin, R. Czernecki, L. Marona, M. Boćkowski, B. Łucznik, M. Leszczyński, and T. Suski „Effect of efficiency “droop” in violet and blue InGaN laser diodes” Appl. Phys. Lett. 95, 071108 (2009)

Piotr Perlin, Katarzyna Holc,  Marcin Sarzyński,  Wolfgang Scheibenzuber, Łucja Marona,  Robert Czernecki,  Mike Leszczyński,  Michał Bockowski, Izabella Grzegory,  Sylwester Porowski, Grzegorz Cywiński, Piotr Firek, Jan Szmidt, Ulrich Schwarz, and Tadek Suski „Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes” Appl. Phys. Lett.  95, 261108 ,(2009)

T. Suski,  E. Litwin-Staszewska,  R. Piotrzkowski,  R. Czernecki, M. Krysko, S. Grzanka,  G. Nowak,  G. Franssen,  L. H. Dmowski,  M. Leszczynski,  P. Perlin,  B.Łucznik, I. Grzegory,  R. Jakieła, “Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy” Appl. Phys. Lett. 93, 172117 (2008);

S. Grzanka, G. Franssen, G. Targowski, R. Czernecki, A. Khachapuridze, I. Makarowa, R. Wiśniewska, P. Mensz, P. Perlin, and T. Suski, “Carrier recombination mechanisms in nitride single quantum well light-emitting diodes revealed by photo- and electroluminescence” J. Appl. Phys. 104 094504 (2008)

P. Perlin, T. Świetlik, L. Marona, R. Czernecki, T. Suski, M. Leszczyński, I. Grzegory, S. Krukowski, G. Nowak, G. Kamler, A. Czerwiński, M. Plusa, M. Bednarek, J. Rybiński, S. Porowski “Fabrication and properties of GaN-based lasers” J. Cryst. Growth 310, 3979 (2008)

S. Grzanka, G. Franssen, G. Targowski, K. Krowicki, T. Suski, R. Czernecki, P. Perlin, and M. Leszczyński “Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes”, Appl. Phys. Lett. 90, 103507 (2007)

H. Teisseyre, C. Skierbiszewski, A. Khachapuridze, A. Feduniewicz-muda, M. Siekacz, B. Łucznik, G. Kamler, M. Kryko, T. Suski, P. Perlin, I. Grzegory, and S. Porowski  „Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (110) nonpolar direction” Appl. Phys. Lett. 90, 081104 (2007)

MP. D'Evelyn; HC. Hong; DS. Park; H.  Lu; E. Kaminsky; RR. Melkote P. Perlin; M. Leszczyński; S.  Porowski; RJ. Molnar  “Bulk GaN crystal growth by the high-pressure ammonothermal method “ Journal-of-Crystal-Growth. 300, 11 (2007)

T. Świetlik; G. Franssen; R. Czernecki; M.  Leszczyński; C.  Skierbiszewski; I. Grzegory; T. Suski; P. Perlin; C. Lauterbach;  UT. Schwarz  “Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate”, J. Appl. Phys. 101, 83109 (2007)

Skierbiszewski-C; Siekacz-M; Perlin-P; Feduniewicz-Żmuda-A; Cywiński-G; Grzegory-I; Leszczyński-M; Wasilewski-ZR; Porowski-S, “Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE” Journal-of-Crystal-Growth. 2007; 305(2): 346-54

S.  Bychikhin; T. Świetlik; T. Suski; S. Porowski; P. Perlin; D. Pogany, “Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping”,  Microelectronics-Reliability. 47 1649 (2007)

Marcin Sarzyński, Marcin Kryko, Grzegorz Targowski, Grzegorz Kamler, Jarosaw Domagała, Robert Czernecki, Adam Libura, Piotr Perlin, and Michał Leszczyński “Nitride based laser diodes on substrates with patterned AlN mask” Appl. Phys. Lett. 91, 221103 (2007)

M. Kryśko, G. Franssen, and T. Suski, M. Albrecht, B.Łucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczyński, and P. Perlin “Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates”, Appl. Phys. Lett. 91, 211904 (2007)

M. Sarzyński, M. Kryśko, G. Targowski, R. Czernecki, A. Sarzyńska, A. Libura, W. Krupczyński, P. Perlin, M. Leszczyński, „Elimination of AlGaN epilayer cracking by spatially patterned AlN mask” Appl. Phys. Lett. 88, 121124-1-3 (2006)

T. Świetlik; G. Franssen; P. Wiśniewski; S.  Krukowski;  SP. Łepkowski; L.  Marona,; M. Leszczyński; P.  Prystawko;  I. Grzegory,; T.  Suski; S. Porowski,; P. Perlin; R. Czernecki;A. Bering-Staniszewska, PG. Eliseev, „Anomalous temperature characteristics of single wide quantum well InGaN“, Appl.-Phys.-Lett. 88: 71121 (2006)

L. Marona, P. Wiśniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, M. Leszczyński, „Degradation mechanisms in InGaN laser diodes grown on bulk GaN substrates” Appl. Phys. Lett. 88, 201111 (2006)

G. Franssen; JA. Plesiewicz; LH.  Dmowski ;P.  Prystawko; T.  Suski;  W. Krupczyński ; R. Jachymek ;P. Perlin;  M. Leszczyński “Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructures determined by means of capacitance-voltage characterization” , J. Appl. Phys. 100, 113712 (2006)

G. Franssen; T. Suski; P. Perlin; H.  Teisseyre;  A.  Khachapuridze; LH. Dmowski; JA. Plesiewicz;  A. Kamińska; M. Kurouchi;  Y. Nanishi; W. Schaff “Band-to-band character of photoluminescence from InN and in-rich InGaN revealed by hydrostatic pressure studies”, Appl. Phys. Lett.  2006; 89, 121915 (2006)

C. Skierbiszewski; P. Wiśniewski; M. Siekacz; P. Perlin; A. Feduniewicz-Żmuda; G. Nowak; I. Grzegory; M. Leszczyński; S. Porowski, “60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy” , Appl. Phys. Lett.  88, 221108 (2006)

H. Teisseyre, T. Suski, S. Łepkowski, P. Perlin, G. Jurczak, P. Dłużewski, B. Daudin, and N. Grandjean “Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies”, Appl. Phys. Lett. 89, 051902 (2006)

C. Skierbiszewski, Z.R. Wasilewski, M. Siekacz, A. Feduniewicz, P. Perlin, P. Wiśniewski, J. Borysiuk, I. Grzegory, M. Leszczyński, T. Suski, S. Porowski, „Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-asisted molecular beam epitaxy” Appl. Phys. Lett 86, 011114 (2005)

R. Czernecki, G. Franssen, T. Suski, T. Świetlik, J. Borysiuk, S. Grzanka, P. Lefebvre, M. Leszczyński, P. Perlin, I. Grzegory, S. Porowski „Localization effects in InGaN/GaN double heterostructure laser diode structures grown on bulk GaN” Jap. J. Appl. Phys. 44, 7244 (2005)

S. Miasojedovas, S. Jursenas, A. Zukauskas, VY. Ivanov, M. Godlewski, M. Leszczyński, P. Perlin, T. Suski „Spontaneus and stimulated emission in quantum structures grown over bulk GaN and sapphire” J. Cryst. Growth 281, 183 (2005)

P. Perlin,  T. Suski; M. Leszczyński; P.  Prystawko; T.  Świetlik; L.  Marona;  P. Wisniewski; R. Czernecki;  G. Nowak; JL. Weyher; G.  Kamle;  J. Borysiu; E. Litwin-Staszewska; L.  Dmowski; R. Piotrzkowski;  G. Franssen; S. Grzanka; I. Grzegory; S. Porowski “Properties of InGaN blue laser diodes grown on bulk GaN substrates” , Journal-of-Crystal-Growth. 281(1): 107 (2005)

G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, W. Trzeciakowski, I. Makarowa, P. Prystawko, M. Leszczyński, I. Grzegory, S. Porowski, S. Kokenyesi, „Fully-screened  polarization-induced electric fields in blue/violet InGaN/GaN light emitting devices grown on bulk GaN”, Appl. Phys. Lett. 87, 041109 (2005)

H. Teisseyre, C. Skierbiszewski, B. Łucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, S. Porowski, „Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along nonpolar (11-20) direction” , Appl. Phys. Lett. 86, 162112 (2005)

G. Franssen, S. Grzanka, R. Czernecki, T. Suski, L. Marona, T. Riemann, J. Christen,H. Teisseyre,P.  Valvin, P.  Lefebvre, P. Perlin,M. Leszczyński, I. Grzegory,  „ Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates” J. Appl. Phys. 97 103507 (2005)

G. Franssen , P. Perlin, T. Suski, “Photocurrent spectroscopy as a tool for determining piezoelectric fields in InGaN/GaN multiple quantum well light emitting diodes”,  Phys. Rev. B 69, 45310 (2004)

P. Prystawko, R.  Czernecki, L.  Gorczyca, G.  Targowski, P. Wiśniewski, P. Perlin, M. Zieliński, T. Suski, M. Leszczyński, I.  Grzegory,S. Porowski, „High-power laser structures grown on bulk GaN crystals”, J. Cryst. Growth.272, 274 (2004)

T. Suski, G.  Franssen , P. Perlin, R. Bohdan,  A. Bercha , P. Adamiec , F. Dybała, W. Trzeciakowski,P. Prystawko, M. Leszczynski,  I. Grzegory, S. Porowski. „A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal” , Appl. Phys. Lett. 84, 1236 (2004)

K. Kazlauskas, G. Tamulaitis,  A. Zukauskas,T. Suski, P. Perlin, M. Leszczyński, P. Prystawko, I. Grzegory  “Stimulated emission due to spatially separated electron-hole plasma and exciton system in homoepitaxial GaN” Phys. Rev. B.69, 245316 (2004).

S. Jursenas, N. Kurilcik, G. Kurilcik, S. Miasojedovas, A. Zukauskas,T.  Suski, P. Perlin , M. Leszczyński, P. Prystawko, I. Grzegory. „ Optical gain in homoepitaxial GaN” Appl. Phys. Lett., 85, 952 (2004)”

O. Yastrubchak, T. Wosiński, A. Makosa, T. Figielski, S. Porowski, I. Grzegory, R. Czernecki, and P. Perlin, „Capture kinetics at dislocation-related deep levels in III-V, heterostructures”, Eur. Phys. J. Appl. Phys. 27, 201, (2004)

H. Teisseyre, T. Suski, S. P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama, and Y. Aoyagi ;  “Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light emitting diodes”, Appl. Phys. Lett. 82, 1541 (2003)

H. Teisseyre, T. Suski, SP. Łepkowski, S. Anceau, P. Perlin,P.  Lefebvre, L. Konczewicz, H. Hirayama, Y. Aoyagi. “Determination of built-in electric fields in quaternary InAlGaN  heterostructures” Appl. Phys. Lett. 1541, (2003)

G. Franssen, E. Litwin-Staszewska, R. Piotrzkowski, T. Suski, and P. Perlin “Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes”,  J. Appl. Phys. 94, 6122 (2003).

Ivanov VYu, Godlewski M., Teisseyre H., Perlin P., Czernecki R, Prystawko P, Leszczynski M, Grzegory I, Suski T, Porowski S. “Ultralow threshold powers for optical pumping of homoepitaxial InGaN/GaN/AlGaN lasers” Appl.  Phys.  Lett . 81, 3735 (2002)

T. Suski ,H.  Teisseyre, SP. Łepkowski ,P.  Perlin, T.  Kitamura, Y. Ishida, H. Okumura, SF. Chichibu “Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells”, Appl. Phys.  Lett., .81, 232 (2002)

Ching-Hua-Su, W. Pałosz, Shen-Zhu, SL. Lehoczky, I. Grzegory, P. Perlin T. Suski, “Energy gap in GaN single crystals between 293 and 1237 K” J. Crystal Growth 235, 111 (2002)

V. Pacebutas, A. Krotkus, T. Suski, P. Perlin, M. Leszczyński „Photocunductive z-scan measurements of multiphonon absorption in GaN” J. Appl. Phys. 92, 6930 (2002)

C. Skierbiszewski, P. Perlin, P. Wiśniewski, T. Suski, JF. Geisc, K. Hinglerl, W. Jantsch, DE. Mars, W. Walukiewicz „Band structure and optical properties of InyGa1-yAs1-xNx” Phys. Rev. B 65, 035207  (2002)

SP. Łepkowski, T.  Suski, P. Perlin, VY. Ivanov, M. Godlewski, N.  Grandjea, J. Massies, “Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation” J. Appl. Phys. ,91 9622-9628 (2002)

S.P. Łepkowski, H. Teisseyre, T. Suski and P. Perlin , N. Grandjean and J. Massies, “Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells”, Appl. Phys. Lett. 79, 1483, (2001)

P.Perlin, I.Gorczyca, T.Suski, P.Wiśniewski, S.Łepkowski, N.E. Christensen, A. Svane, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean and J. Massies,  “Influence of pressure on the optical properties of InGaN epilayers and quantum structures” Phys. Rev. B 64 1153, (2001)

S. Jursenas, N. Kurilcik, G.Kurilcik,  A. Zukauskas, P. Prystawko,  M.  Leszczyński, T.  Suski, P. Perlin, I. Grzegory, S. Porowski, ” Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN„ Appl. Phys. Lett., 78, 3776, (2001)

V. Pacebutas, A. Stalnionis, A. Krotkus, T. Suski, P. Perlin, M. Leszczyński “Picosecond Z-scan measurements on bulk GaN crystals” Appl. Phys. Lett.,78, 4118 (2001)

Suski T, Litwin-Staszewska E, Perlin P, Wiśniewski P, Teisseyre H, Grzegory I, Boćkowski M, Porowski S, Saarinen K, Nissila „Optical and electrical properties of Be doped GaN bulk crystals”, J.Cryst. Growth ,230,  368 (2001)

E. Frassinet, W. Knap,  S. Krukowski; P. Perlin ; . P. Wiśniewski; T. Suski; I. Grzegory ; S. Porowski; „Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals”, J. Cryst. Growth, 2001, vol. 230, no 3-4 (277 p.) (16 ref.), pp. 442-447

M. Leszczyński, P. Prystawko, R. Czernecki, J. Lehnert, T. Suski, P. Perlin, P. Wiśniewski, I. Grzegory, G. Nowak, S. Porowski, M. Albrecht  „III-N ternary epilayers grown on GaN bulk crystals” Journal Crystal Growth, 231, 352 (2001)

Piotr Perlin, Przemek Wiśniewski, Czesław Skierbiszewski, Tadeusz Suski, Eliana Kamińska, Sudhir G. Subramanya, Eicke R. Weber, Dan E. Mars, Władek Walukiewicz “Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01” Appl. Phys. Lett. 76, 1279 (2000)

C. Skierbiszewski, P. Perlin, P. Wiśniewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, E.E. Haller, J.F. Geisz, J.M. Olson “Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1‑yNxAs1‑x” Appl. Phys. Lett. .76,.2409 (2000).

H. Teisseyre, T. Suski, P. Perlin, I. Grzegory, M. Leszczyński, M. Boćkowski, S. Porowski, J.A. Freitas, Jr., R.L. Henry, A.E. Wickenden, D.D. Koleske “Different Character of donor-acceptor pair related 3.27 eV band and blue photoluminescence in GaN:Mg. Hydrostatic pressure studies” Phys. Rev. B 62, 10151 (2000)

Yihwan Kim, Subramanya SG, Siegle H, Kruger J, Perlin P, Weber ER, Ruvimov S, Lilliental-Weber Z. “GaN thin films by growth on Ga-rich GaN buffer layers.” J.  Appl.  Phys., .88, 6032  (2000)

N.A. Shapiro,Y. Kim , H. Feick, E.R. Weber, P. Perlin , J.W.Yang, I. Akasaki , H. Amano “Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain.  “ Phys. Rev. B..62,  .R16318-21 (2000)

Piotr Perlin, Laila Mattos, Noad A. Shapiro, Joachim Kruger, William S. Wong, Tim Sands, Nathan W. Cheung and Eicke R. Weber “The reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate” J. Appl. Physics, 85, 2385 (1999)

P. Perlin, T. Suski, J.W. Ager III., G. Conti, A. Polian, N.E. Christensen, I. Gorczyca, I. Grzegory, E. R. Weber, E. Haller “Transverse effective charge and its pressure dependence in gallium nitride single crystals” Phys. Rev. B, 60, 1480 (1999)

Tadeusz Suski, Piotr Perlin, Adam Pietraszko, Michał Leszczyński, , Michał Boćkowski, Izabela Grzegory and Sylwester Porowski “(GaMg)N – new semiconductor grown at high pressure of nitrogen” J. Cryst Growth. 207, 27 (1999)

J.S. Colton, P. Yu, K.L. Teo, E.R. Weber, P. Perlin, I. Grzegory, K. Uchida “Selective excitation and thermal quenching of the yellow luminescence of GaN” Appl. Phys. Lett 75, 3273 (1999)

M. Osiński, DL. Barton, P. Perlin, Jinhyun-Lee „Effects of high electric al stress on GaN/InGaN/AlGaN single-quantum well light-emitting diodes” J. Crystal Growth 189-90, 808-11 (1998)

M. Osiński, P. Perlin, P.G. Eliseev, J. Lee, V.A..Smagley “Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures” Journal of Crystal Growth, vol.189-190, 803 (1998)

W. Shan, P. Perlin, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour “Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure” Appl. Phys. Lett. 73, 1613, (1998)

P. Perlin, S.G. Subramanya, D.E. Mars, J. Kruger, N.A. Shapiro, H. Siegle, E.R. Weber “Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.985N0.015N layer”. Appl. Phys. Lett., 73, 3703 (1998).

P. Perlin, C. Kisielowski, V. Iota, B. A. Weinstein, L. Mattos, N. A. Shapiro, J. Kruger, E. R. Weber, Jinwei Yang “InGaN/GaN quantum wells studied by high pressure, variable temperature and excitation power spectroscopy” Appl. Phys. Lett. 73, 2778, (1998)

Perlin, V. Iota-Herbei, B.A. Weinstein, P. Wiśniewski, T. Suski, P.G. Eliseev, M. Osiński, "Influence of pressure on the photoluminescence and electroluminescence of GaN/InGAN/AlGaN quantum wells" Appl. Phys. Lett. 70, 2993 (1997)

Marek Osin´ski, Piotr Perlin, Harald Schöne, Alan H. Paxton and Edward W. Taylor "Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes" Electronics Letters 33, 1252 (1997)

C. Wetzel, T.Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fisher, B.K.Meyer, R.J. Molnar, P. Perlin "Pressure induced deep gap state of oxygen in GaN" Phys. Rev. Lett. 78, 3923, (1997)

P.G. Eliseev, P.Perlin, Jinhyun Lee and M. Osiński "Blue temperature-induced shift and band-tail emission in InGaN-based light sources." Appl. Phys. Lett. 71, 569 (1997)

P. Perlin, E. Litwin-Staszewska, B. Suchanek, W. Knap, J. Camassel, T. Suski, R. Piotrzkowski, I. Grzegory, S. Porowski, E. Kamińska, J. C. Chervin "Determination of the effective mass of GaN from infrared reflectivity and Hall efect" Appl. Phys. Lett. 68 1114 (1996)

Piotr Perlin, Marek Osin´ski, Petr G. Eliseev, Vladimir A. Smagley, Jian Mu, Michael Banas, and Philippe Sartori "Low-temperature study of current and  electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes" Appl. Phys. Lett 69, 1680, (1996)

P. Perlin,T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J.Jun, S. Porowski, P. Bogusławski, J. Bernholc, J.C. Chervin, A. Polian, T.D. Moustakas. “Towards the identification of the dominant donor in GaN” Phys. Rev. Lett. 75, 296 (1995)

P. Perlin, J. Camassel, W. Knap, , T. Taliercio, J.C. Chervin, T. Suski, I. Grzegory and S. Porowski. “Investigations of LO phonon-plasmon coupled modes in highly conducting bulk GaN” Appl. Phys. Lett. 67, 2524, (1995)

Suski, P. Perlin, H. Teisseyre, M. Leszczyński, I. Grzegory J. Jun, M. Boćkowski and S. Porowski. “Mechanism of Yellow Luminescence in GaN” Appl. Phys. Lett. 67, 2188, (1995)

H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas "Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer" J. Appl. Phys 76, 2429, (1994)

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P. Perlin, A. Polian, and T. Suski "Raman cattering studies of aluminium nitride at high pressure." Phys. Rev. B 47, 2874 (1993)

P. Perlin, C. Jauberthie-Carillon, J.P. Itie, A. San Miguel, I. Grzegory and A. Polian "Raman scattering and x-ray absorption spectroscopy in gallium nitride under high pressure." Phys. Rev. B, 45, 83 (1992)

P. Perlin, I. Gorczyca, N.E. Christensen, I. Grzegory, H. Teisseyre and T. Suski "Pressure Studies f Gallium Nitride Crystal growth and fundamental electronic properties." Phys. Rev. B 45, 13307 (1992)
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