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Marta Sawicka graduated from the Faculty of Materials Science, Warsaw University of Technology. She obtained her PhD in 2015 in the Institute of High Pressure Physics PAS under the supervision of prof. Czesław Skierbiszewski. The thesis entitled “Growth mechanisms of GaN, InGaN and AlGaN layers on GaN substrates of various crystallographic orientation studied by plasma-assisted molecular beam epitaxy" is available HERE (in Polish). She co-authored more than 40 scientific publications. From 2012 to 2016 she was a project leader of National Science Center PRELUDIUM project "Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN quantum layers and structures with non-polar (10-10) and semipolar (20-21) orientation".
The main scientific accomplishments of Marta Sawicka are:
Demonstration of world first semipolar (20-21) laser diodes (LDs) and light-emitting diodes (LEDs) emitting ultraviolet light fabricated using plasma-assisted molecular beam epitaxy (PAMBE)
Linking the growth conditions with surface, structural and optical properties of GaN, AlGaN and InGaN layers grown by PAMBE on various crystallographic orientations, in particular on nonpolar (10-10) and semipolar (20-21) GaN substrates
Marta Sawicka is an expert in epitaxy and characterization of nitride layers and structures. She is interested in surface morphology and structural properties studies by various microscopy methods - AFM, TEM, SEM, OM. She investigates growth mechanisms of GaN, InGaN, InAlN i AlGaN, with the focus on the effects of GaN substrate miscut and surface crystallographic orientation: Ga-polar (0001), N-polar (000-1), semipolar (20-21) and nonpolar (10-10). She collaborates with TopGaN Ltd in the area of laser diode research and development.
Marta Sawicka enjoys explaining physics and telling about gallium nitride.